한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권4호
  • /
  • Pages.261-265
  • /
  • 2012
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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600 V급 Planar Field Stop IGBT 최적 설계 및 전기적 특성 분석에 관한 연구

A Study on Optimal Design and Electrical Characteristics of 600 V Planar Field Stop IGBT

  • Nam, Tae-Jin (Department of Photovoltaic Engineering, Far East University) ;
  • Jung, Eun-Sik (Maple Semiconductor, Incorporated) ;
  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • 투고 : 2012.03.20
  • 심사 : 2012.03.24
  • 발행 : 2012.04.01
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초록

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

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참고문헌

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