References
- J. K. Jeong, J. H. Jeong, J. H. Choi, J. S. Im, S. H. Kim, H. W. Yang, K.N. Kang, K. S. Kim, T. K. Ahn, H. J. Chung, M. K. Kim, B. S. Gu, J. S. Park, Y. G. Mo, H. D. Kim and H. K. Chung, SID Int. Symp. Digest Tech. Papers, 39, 1 (2008) [http://dx.doi. org/10.1889/1.3069591].
- J. H. Lee, D. H. Kim, D. J. Yang, S. Y. Hong, K. S. Yoon, P. S. Hong, C. O. Jeong, H. S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K. S. Son, T. S. Kim, J. Y. Kwon and S. Y. Lee, SID Int. Symp. Digest Tech. Papers, 39, 625 (2008) [http://dx.doi.org/10.1889/1.3069740].
- J. M. Lee, I. T. Cho, J. H. Lee and H. I. Kwon, Appl. Phys. Lett., 93, 093504 (2008) [http://dx.doi.org/10.1063/1.2977865].
- A. Suresh and J. F. Mutha, Appl. Phys. Lett., 92, 033502 (2008) [http://dx.doi.org/10.1063/1.2824758].
- J. Triska, J. F. Conley, R. Presley and J. F. Wager, J. Vac. Sci. Technol. B, 28, C5I1 (2010) [http://dx.doi.org/10.1116/1.3455494].
- Y. K. Moon, Sih Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee and J. W. Park, Appl. Phys. Lett., 95, 013507 (2009) [http:// dx.doi.org/10.1063/1.3167816].
- J. S. Lee, J. S. Park, Y. S. Pyo, D. B. Lee, E. H. Kim, D. Stryakhilev, T. W. Kim, D. U. Jin and Y. G. Mo, Appl. Phys. Lett., 95, 123502 (2009) [http://dx.doi.org/10.1063/1.3232179].
- J. H. Lee, S. G. Park, S. M. Han, M. K. Han, K. C. Park, Solid- State Electronics, 52, 462 (2008) [http://dx.doi.org/10.1016/ j.sse.2007.10.030].
- S. Y. Huang, T. C. Chang, M. C. Chen, and W. L. Liau, Electrochemical and Solid-State Letters, 14, H177 (2011) [http:// dx.doi.org/10.1149/1.3534828].
- C. T. Tsai, T. C. Chang, S. C. Chen, Ikai Lo, S. W. Tsao, M. C. Hung, J. J. Chang, C. Y. Wu and C. Y. Huang, Appl. Phys. Lett., 96, 242105 (2010) [http://dx.doi.org/10.1063/1.3453870].
- F. R. Libsch and J. Kanicki, Appl. Phys. Lett., 62, 1286 (1993) [http://dx.doi.org/10.1063/1.108709].
- C. F. Huang, C. Y. Peng, Y. J. Yang, H. C. Sun, H. C. Chang, P. S. Kuo, H. L. Chang, C. Z. Liu and C. W. Liu, IEEE Electron Device Letters, 29, 1332 (2008) [http://dx.doi.org/10.1109/ LED.2008.2007306].
- P. Kofstad, J. Phys. chem. Solids, 23, 1571 (1962) [http://dx.doi. org/10.1016/0022-3697(62)90239-1].
- P. Bonasewicz, W. hirschwald, and G. Neumann, Phys. Status solidi A, 97, 593 (1986) [http://dx.doi.org/ 10.1002/ pssa.2210970234].
- V. Gavryushin, G. Raciukaitis, D. Juodzbalis, A. Kazlauskas, and V. Kubertavicius, J. Cryst. Growth, 138, 924 (1994) [http://dx.doi. org/10.1016/0022-0248(94)90933-4].
- Anderson Janotti and Chris G. Van de Walle, Phys. Rev. B, 76, 165202 (2007) [http://dx.doi.org/ 10.1103/Phys- RevB.76.165202].
- T. K. Gupta, J. Am. Ceram. Soc., 73, 1817 (1990) [http://dx.doi. org/10.1111/j.1151-2916.1990.tb05232.x].
- T. K. Gupta, W. G. Carlson, P. L. Hower, J. Appl. Phys., 52, 4104 (1981) [http://dx.doi.org/10.1063/1.329262].
- S. L. Jiang, T. T. Xie, H. Yu, Y. Q. Huang and H. B. Zhang, Microelectronic Engineering, 85, 371 (2008) [http://dx.doi. org/10.1016/j.mee.2007.07.011].
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