A Study on Silicon Nitride Films by high frequency PECVD for Crystalline Silicon Solar Cells

결정질 실리콘 태양전지를 위한 고주파 PECVD SiNx막 연구

  • Kim, Jeong-Hwan (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Jung, Jong-Dae (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
  • 김정환 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 노시철 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 최정호 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 정종대 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 서화일 (한국기술교육대학교 전기.전자.통신공학과)
  • Received : 2012.05.16
  • Accepted : 2012.06.15
  • Published : 2012.06.30

Abstract

SiNx films have been wildly used as anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, the SiNx films were deposited by using high frequency (13.56MHz) PECVD and optical & passivation properties were investigated. The RF power was changed in a certain range for the film deposition. Then, the refractive index, etch rate, minority carrier lifetime and cell efficiency were measured to study the properties of the film respectively. The optimal deposition conditions for application to crystalline silicon solar cells were proposed as results of the study. Finally, the best cell efficiency of 16.98% was obtained from the solar cell with the SiNx films deposited by RF power of 550W.

Keywords

References

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