Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Design of Normally-Off AlGaN Heterojunction Field Effect Transistor Based on Polarization Engineering

분극 엔지니어링을 통한 상시불통형 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 설계

  • Received : 2012.11.08
  • Accepted : 2012.11.22
  • Published : 2012.12.31
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Abstract

In this study, we propose a novel structure based on AlGaN substrate or buffer layer to implement a normally-off mode transistor that was difficult to be realized by conventional AlGaN/GaN heterojunction structures. The channel under the gate can be selectively depleted by growing an upper AlGaN barrier with a higher Al mole fraction and a top GaN charge elimination layer on AlGaN substrate or buffer layer. The proposed AlGaN heterojunction field effect transistor can achieve a threshold voltage of > 2 V, which is generally required in power device specification.

본 연구에서는 기존의 질화알루미늄갈륨/질화갈륨 이종접합 구조에서 강한 분극현상으로 인하여 구현하기 어려웠던 상시불통형 소자를 질화알루미늄갈륨 기판 혹은 버퍼층을 이용하여 구현하는 방법을 제안한다. 질화알루미늄갈륨 기판 혹은 버퍼층 위에 더 높은 Al 몰분율을 갖는 장벽층을 성장하고 최상부에 질화갈륨 층을 추가 성장하여 분극전하를 상쇄시키는 방법을 이용하여 선택적으로 게이트 아래의 채널만 공핍시켜 상시불통형 소자를 구현할 수 있다. 이를 통하여 본 연구에서는 상용 전력소자에서 요구하는 게이트 문턱전압 2 V 이상을 갖는 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 에피구조를 제안한다.

Keywords

References

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