The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characteristics on Boundary Layer and Formation Mechanism of c-BN Thin Films During Electron Assisted Hot Filament CVD Process

EAHFCVD법에 의한 c-BN 박막형성기구와 계면층의 특성에 관하여

  • 최용 (단국대 공대 신소재공학과) ;
  • 최진일 (단국대 공대 신소재공학과)
  • Received : 2011.09.15
  • Accepted : 2011.11.22
  • Published : 2012.01.01
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Abstract

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

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References

  1. A. Ghosh, S. Devadas, K. Keutzer and J. White, "Estimation of Average Switching Activity in Combinational and Sequential Circuits," ACM/IEE Design Automation Conf., pp. 253-259, 1992.
  2. F.N. Najm, "A Survey of Power Estimation Techniques in VLSI Circuits," IEEE Trans. on VLSI Systems, pp. 446-455, Dec. 1994.
  3. J. Monteiro, S. Devadas, and B. Lin, "A Methodology for Efficient Estimation of Switching Activity in Sequential Logic Circuits," ACM/IEEE Design Automation Conf., pp. 12-17, 1994.
  4. R. Burch, F. N. Najm, P. Yang, and T. N. Trick, "A Monte Carlo Approach for Power Estimation," IEEE Trans. on VLSI systems, vol. 1, No. 1, pp.63-71, March 1993. https://doi.org/10.1109/92.219908
  5. A. Papoulis, Probability, Random Variables, and Stochastic Processes, 3rd Edition, New York: McGraw-Hill, 1991.
  6. Y. N. Xu and W.Y.Ching ; Phys Rev. B. 44 (1991) 7787 https://doi.org/10.1103/PhysRevB.44.7787
  7. S. Bohr, R. Haubner and B. Lux ; Diamond and Related Mat. 4 (1995) 714 https://doi.org/10.1016/0925-9635(94)05224-7
  8. M.B. Guseve, V.G. Vabaev and V.S. Guden ; Diamond and Related Mat. 10 (2001) 1385 https://doi.org/10.1016/S0925-9635(01)00370-3
  9. A. Soltani, P. Thevenin and A. Bath ; Diamond and Related Mat. 10 (2001) 1369 https://doi.org/10.1016/S0925-9635(00)00416-7
  10. C.C. Hung and H.C. Shih ; Journal of Crystal Growth. 233 (2001) 723 https://doi.org/10.1016/S0022-0248(01)01607-4
  11. Taso Chung Chen ; Journal of Materials Processing Technology. 123 (2002)1 https://doi.org/10.1016/S0924-0136(01)01152-9
  12. S. J Zhang and G.H. Chen ; Vaccum 66 (2002) 65 https://doi.org/10.1016/S0042-207X(01)00426-2
  13. Z. Song, F.Zhang and G.H Chen ; Apply Phys. Lett. 65 (1994) 2669 https://doi.org/10.1063/1.112597
  14. J. Tian, L. Xia, X. Ma and S.R. Lee ; Thin Solid Films. 355 (1999) 229 https://doi.org/10.1016/S0040-6090(99)00504-0
  15. D.R. Mackenzie, W.D. Mcfall, C.A. Davis and R.E. Collins ; Diamond and Related Materials. 2 (1993) 970 https://doi.org/10.1016/0925-9635(93)90260-9
  16. R. Seitz and J.S Koehler ; Progress in Solid State Phisics. Academic, NewYork (1957) 30
  17. K. Janshosky, W. Evert and E. Kohn ; Diamond and Rel. Mater. 12 (2003) 336 https://doi.org/10.1016/S0925-9635(02)00294-7
  18. J.I. Choe ; "Synthesis of Diamond thin films by HF CVD", J. Korea association of Crystal Growth, 8 (1998) 227
  19. P.B. Mikarim and K.F. Mctarty ; Materials Sci. Engineering. R21 (1997) 47