JSTS:Journal of Semiconductor Technology and Science

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Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications

  • Narang, Rakhi (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus) ;
  • Saxena, Manoj (Department of Electronics, Deen Dayal Upadhyaya, College, University of Delhi) ;
  • Gupta, R.S. (Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology) ;
  • Gupta, Mridula (Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus)
  • Received : 2012.08.01
  • Published : 2012.12.31
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Abstract

In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET) architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance.

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References

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