한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권12호
  • /
  • Pages.984-989
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  • 2012
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Ga의 도핑농도에 따른 ZnO 박막의 특성

Effects of Doping Concentration on the Properties of Ga-doped ZnO Thin Films Prepared by RF Magnetron Sputtering

  • 김형민 (경상대학교 반도체공학과) ;
  • 마대영 (경상대학교 전기공학과) ;
  • 박기철 (경상대학교 반도체공학과)
  • Kim, Hyoung Min (Department of Semiconductor Engineering, Gyeongsang National University) ;
  • Ma, Dae Young (Department of Electrical Engineering, Gyeongsang National University) ;
  • Park, Ki Cheol (Department of Semiconductor Engineering, Gyeongsang National University)
  • 투고 : 2012.09.11
  • 심사 : 2012.11.21
  • 발행 : 2012.12.01
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초록

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.

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