결정질 태양전지를 위한 HF 화학 패시베이션 연구

A Study on HF Chemical Passivation for Crystalline Silicon Solar Cell Application

  • 최정호 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 노시철 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 유동열 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 이진화 (한국기술교육대학교 전기.전자.통신공학과) ;
  • 김영철 (한국기술교육대학교 에너지.신소재.화학공학부) ;
  • 서화일 (한국기술교육대학교 전기.전자.통신공학과)
  • Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Yu, Dong-Yeol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Li, Zhen-Hua (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Kim, Yeong-Cheol (School of Energy & Materials & chemical Engineering, Korea University of Technology and Education) ;
  • Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
  • 투고 : 2011.02.15
  • 심사 : 2011.03.15
  • 발행 : 2011.03.31

초록

The surface passivation is one of the important methods that can improve the efficiency of solar cells and can be classified into two methods: wet-chemical passivation and film passivation. In this paper, chemical HF treatment were employed for the passivation of n-type silicon wafers and their effects were studied. To investigate film passivation effects, the silicon nitride films were also deposited by PECVD (plasma-enhanced chemical vapor deposition) on n-type silicon wafers treated with chemical HF. The minority carrier lifetime measurements were used for evaluation of the passivation characteristics in the all experiments steps. We confirmed that the minority carrier lifetime was improved with chemical HF treatment due to passivation effects by H-termination.

키워드

참고문헌

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