Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Polytype Transformation Research During SiC Crystal Growth by the Effect of Doping Level in Seed

탄화규소 단결정 성장 시 종자정 도핑농도 영향에 따른 결정 다형변화 연구

  • Park, Jong-Hwi (Department of Materials and Components Engineering, Dong-Eui University) ;
  • Yang, Tae-Kyoung (Department of Materials and Components Engineering, Dong-Eui University) ;
  • Lee, Sang-Il (Department of Materials and Components Engineering, Dong-Eui University) ;
  • Jung, Jung-Young (Department of Materials and Components Engineering, Dong-Eui University) ;
  • Park, Mi-Seon (Department of Materials and Components Engineering, Dong-Eui University) ;
  • Lee, Won-Jae (Department of Materials and Components Engineering, Dong-Eui University)
  • 박종휘 (동의대학교 융합부품공학과) ;
  • 양태경 (동의대학교 융합부품공학과) ;
  • 이상일 (동의대학교 융합부품공학과) ;
  • 정정영 (동의대학교 융합부품공학과) ;
  • 박미선 (동의대학교 융합부품공학과) ;
  • 이원재 (동의대학교 융합부품공학과)
  • Received : 2011.07.27
  • Accepted : 2011.09.02
  • Published : 2011.10.01
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Abstract

In this study, SiC single-crystal ingots were prepared on two seed crystals with different doping level by using the physical vapor transport (PVT) technique; then, SiC crystal wafers sliced from the grown SiC ingot were systematically investigated to find the effect of seed doping level on the doping concentration and crystal quality of the SiC. To exclude extra effects induced by adjustment of the process parameters, we simultaneously grew the SiC crystals on two seed crystals with different level, which were fabricated from previous two SiC crystal ingots.

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References

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