References
- J. R. Roth, IndustrialPlasmaEngineering (IOP.,Bristol, 1995), Vol.1.
- Y. P. Razier, Gas Discharge Physics(Springer-Verlag, Berlin,1991).
- J. W. Coburn and H. F. Winters, Ann. Rev. Mater. Sci. 13,91(1983). https://doi.org/10.1146/annurev.ms.13.080183.000515
- D. L. Tolliver, The History of Plasma Processing in VLSI Electronics Microstructure Science (Academic Press, Florida,1984), Vol.8.
- S. M. Irving, Kodak Photoresist Sem. Proc., Vol.2, May, (1968)
- S. Fang, S. Murakawa and J. P. Mcvittie, IEEE Trans. Electron Devices 41,1848(1994). https://doi.org/10.1109/16.324598
- S. Ma, J. P. Mcvittie, and K. C. Sarawat, IEEE Trans. Electron Device Lett. 16,534(1995). https://doi.org/10.1109/55.475578
- C. H. Chien, C. Y. Chang, H. C. Lin and T. Y. Huang, IEEE Trans. Electron Device Lett. 18,33(1997). https://doi.org/10.1109/55.553034
- W. Kern and V. S. Ban, Thin Film Processes (Academic, NewYork,1978).
- W. Kern and G. L. Schnable, IEEE Trans. Electron Devices ED-26,647(1979).
- E. C. Douglas, Solid State Technol. 24,65(1981).
- H. F. Sterling and R. C. G. Swann, Solid State Electron 8,653(1965) https://doi.org/10.1016/0038-1101(65)90033-X
- A. R. Reinberg, Electrochemical Soc. 91 (1976).
- H. Dun, P. Pan, F. R. White and R. W. Douse, J. Electrochem. Soc. 128,1556(1981).
- V. S. Nguyen, Electrochem. Soc. Ext. Abs. 83-1, 216(1983).
- W. Kern and R. S. Rosier, J. Vac. Sci. Technol. 14,1082 (1977). https://doi.org/10.1116/1.569340
- G. M. Samuelson and K. M. Mar, J. Electrochem. Soc. 129,1773(1982). https://doi.org/10.1149/1.2124291
- K. Koyama, K. Takasaki, M. Maeda and M. Takagi 3rd. Symp. Plasma Processing, Vol. 82-6, Electrochem. Soc. 479 (1982).
- W. A. Bryant, J. Electrochem. Soc. 125,1534(1978). https://doi.org/10.1149/1.2131711
- J. K. Chu, M. S. Thesis, University of California, Berkeley (1982).
- K. Akimoto and K. Watanabe, Appl. Phys, Lett. 39,445(1981). https://doi.org/10.1063/1.92733
- M. Sugawara, Practical Dry Etching Process, Realize, Tokyo, (1992).
- J. Proud and R. A. Gottscho, Plasma Processing of Materials, Scientific Opportunities and Technological Challenges(NationalAcademy,Washington,1991).
- E. S. G. Shaqfeh and C. W. Jurgensen, J. Appl. Phys. 66,4664(1989). https://doi.org/10.1063/1.343823
- S. M. Rosnagel, J. J. Cuomo and W. D. Westwood, Handbook of Plasma Processing Technology (NoyesPublication, NewJersey,1990).
- Y. Hikosaka, M. Nakamura and H. Sugai, Jpn. J. Appl. Phys. 33,2157(1994). https://doi.org/10.1143/JJAP.33.2157
- I. Alexeff and W. D. Jones, Appl. Phys. Lett. 9,77(1966) https://doi.org/10.1063/1.1754650
- K.R.Mackenzie, R. J. Taylor, D. Cohn, E. Ault and H. Ikezi, Appl. Phys. Lett. 18,529(1971) https://doi.org/10.1063/1.1653525
- N. Herschkowitz, M. H. Cho and J. Pruski, Plasma Source Sci. Technol. 1,87(1992) https://doi.org/10.1088/0963-0252/1/2/003
- N. Sato, S. Lizuka, T. Kozumi and T. Takada, Appl. Phys. Lett. 62,567(1993) https://doi.org/10.1063/1.108913
- K. Kato, S. Lizuka and N. Sato, Appl. Phys. Lett. 65,816 (1994). https://doi.org/10.1063/1.112240
- S. Ashida, C. Lee and M. A. Liberman, J. Vac. Sci. Technol. A13,2498(1995).
- A. J. T. Holmes, Rev. Sci. Instrum. 53(10),1523(1982). https://doi.org/10.1063/1.1136829
- T. H. Ahn, Ph.D. -Thesis, University of Nagoya, Nagoya, Japan, March (1997).
- T. Tajima, Computational Plasma Physics: Applications to Fusion and Astrophysics (Addison-Wesley,CA,1989).
- C. K. Birdsall and A. B. Langdon, Plasma physicsvia Computer Simulation (McGraw-Hill, NewYork, 1985).
- R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles(IOP., Bristol,1988).
- A. D. Richards, B. E. Thompson and H. H. Sawin, Appl. Phys. Lett. 50,492(1987) https://doi.org/10.1063/1.98183
- C. K. Birdsall, IEEE Trans. Plasma Sci. 19,65(1991). https://doi.org/10.1109/27.106800
- R. K. Porteous, H. M. Wu and D. B. Graves, Plasma Sources Sci. and Technol. 3,25(1994). https://doi.org/10.1088/0963-0252/3/1/004
- M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (JohnWiley and Sons, NewYork,1994).
- C. T. Gabriel and J. P. MoVittie, Solid State Technol. 81 (1992).
- J. E. Stevens, Y. C. Huang, R. L. Jarecki and J. L. Cecchi, J. Vac. Sci. Technol. A10,1270(1992).
- R. W. Boswell, Phys. Lett. A33,457(1970).
- F. F. Chen, Plasma Phys. and Control. Fusion 33,339(1991). https://doi.org/10.1088/0741-3335/33/4/006
- K. P. Shamrai, V. P. Pavlenko and V. B. Taranov, Plasma Phys. Control. Fusion 39,505(1997). https://doi.org/10.1088/0741-3335/39/3/011
- J. Hopwood, Plasma Sources Sci. Techmol. 1,109 (1992) https://doi.org/10.1088/0963-0252/1/2/006
- V. A. Godyak, R. B. Piejak and B. M. Alexandrovich, Plasma Sources Sci. Technol. 1, 36 (1992). https://doi.org/10.1088/0963-0252/1/1/006
- G. R. Branner, E. M. Friar and G. Medicus, Rev. Sci. Instrument 34,231(1962).
- F. M. Ma and S. Taylor, IEE Proc.-Sci. Meas. Technol. 143,71(1996). https://doi.org/10.1049/ip-smt:19960128
- G. Bruno, P. Capezzuto and G. Cicala, J. Appl. Phys. 69,7256(1991). https://doi.org/10.1063/1.347623
- R. A. Gottscho and T. A. Miller, Pure Appl. Chem. 56,189(1984). https://doi.org/10.1351/pac198456020189
- A. A. Howling, J. L. Dorier and C. Hollenstein, Appl. Phys. Lett. 62,1341(1993). https://doi.org/10.1063/1.108724
- J. S. Logan and J. J. McGill, J. Vac. Sci. Technol. A10,1875(1992).
- G. H. Bai, S. H. Seo and H. Y. Chang, J. Korean Vac. Soc. 7,273(1998).
- S. Samukawa and T. Nakano, J. Vac. Sci. Technol. A14,1002(1996).