DOI QR코드

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Ga 함유량에 따른 Co-evaporation 방법에 의해 제조된 Cu(In1-x,Gax)Se2 박막 태양전지의 구조 및 전기적 특성

Structural and Electrical Properties of Co-evaporated Cu(In1-x,Gax)Se2 Thin Film Solar Cells with Varied Ga Content

  • Lim, Jong-Youb (Department of Electronic Engineering, Chungju National University) ;
  • Lee, Yong-Koo (Department of Electronic Engineering, Chungju National University) ;
  • Park, Jong-Bum (Department of Electronic Engineering, Chungju National University) ;
  • Kim, Min-Young (Department of Electronic Engineering, Chungju National University) ;
  • Yang, Kea-Joon (Department of Electronic Engineering, Chungju National University) ;
  • Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University)
  • 투고 : 2011.07.20
  • 심사 : 2011.08.04
  • 발행 : 2011.09.01

초록

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

키워드

참고문헌

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