한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권9호
  • /
  • Pages.739-743
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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진공열처리온도에 따른 GZO/Cu 박막의 구조적, 광학적, 전기적 특성 변화

Effect of Post Deposition Annealing Temperature on the Structural, Optical and Electrical Properties of GZO/Cu Films

  • 김대일 (울산대학교 첨단소재공학부)
  • Kim, Dae-Il (School of Materials Science and Engineering, University of Ulsan)
  • 투고 : 2011.07.19
  • 심사 : 2011.08.02
  • 발행 : 2011.09.01
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초록

Ga doped ZnO (GZO)/Cu bi-layer films were deposited with RF and DC magnetron sputtering on glass substrate and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in gas pressure of $1{\times}10^{-3}$ Torr and the annealing temperatures were 150 and $300^{\circ}C$. With increasing annealing temperature, GZO/Cu films showed an increment in the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The GZO/Cu films annealed at $300^{\circ}C$ showed the highest optical transmittance of 70% and also showed the lowest electrical resistance of $85\;{\Omega}/{\Box}$ in this study.

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참고문헌

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