한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제48권4호
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  • Pages.316-322
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  • 2011
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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RF Sputtering법에 의한 산화주석 박막의 진공 열처리 효과

The Effect of Vacuum Annealing of Tin Oxide Thin Films Obtained by RF Sputtering

  • 김선필 (서울과학기술대학교 기계설계자동화공학부) ;
  • 김영래 (서울테크노파크 MSP 기술지원센터) ;
  • 김성동 (서울과학기술대학교 기계설계자동화공학부) ;
  • 김사라은경 (서울과학기술대학교 NID융합기술대학원)
  • Kim, Sun-Phil (School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology) ;
  • Kim, Young-Rae (Microsystem Packaging Center, Seoul Technopark) ;
  • Kim, Sung-Dong (School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sarah Eun-Kyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • 투고 : 2011.06.01
  • 심사 : 2011.06.20
  • 발행 : 2011.07.31
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초록

Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{\circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.

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참고문헌

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피인용 문헌

  1. Effect of RF Power on SnO Thin Films Obtained by Sputtering vol.49, pp.5, 2012, https://doi.org/10.4191/kcers.2012.49.5.399
  2. Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target vol.26, pp.4, 2016, https://doi.org/10.3740/MRSK.2016.26.4.222