Korean Chemical Engineering Research

  • 제49권3호
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  • Pages.357-360
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  • 2011
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  • 0304-128X(pISSN)
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  • 2233-9558(eISSN)
한국화학공학회 (The Korean Institute of Chemical Engineers)
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플라즈마 원자층 증착 방법을 이용한 N-doped ZnO 나노박막의 구조적.광학적.전기적 특성

Structural, Optical and Electrical Properties of N-doped ZnO Nanofilms by Plasma Enhanced Atomic Layer Deposition

  • 김진환 (전북대학교 반도체.화학공학부) ;
  • 양완연 (경원대학교 응용통계학과) ;
  • 한윤봉 (전북대학교 반도체.화학공학부)
  • Kim, Jin-Hwan (School of Semiconductor and Chemical Engineering, College of Engineering, Chonbuk National University) ;
  • Yang, Wan-Youn (Department of Applied Statistics, Kyungwon University) ;
  • Hahn, Yoon-Bong (School of Semiconductor and Chemical Engineering, College of Engineering, Chonbuk National University)
  • 발행 : 2011.06.30
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초록

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

N-doped ZnO nanofilms were prepared by plasma enhanced atomic layer deposition method. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ and $N_{2}$ were used as Zn, O and N sources, respectively, for N-doped ZnO films under variation of radio frequency (rf) power from 50-300W. Structural, optical and electrical properties of as-grown ZnO films were investigated with Xray diffraction(XRD), photoluminescence(PL) and Hall-effect measurements, respectively. Nitrogen content and p-type conductivity in ZnO nanofilms increased with the rf power.

키워드

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