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A study on $CeO_2$ buffer layer on biaxially textured Ni-3%W substrate deposited by electron beam evaporation with high deposition rate

전자빔 증착법으로 이축배향된 Ni-3%W 기판 위에 높은 증착률로 제조된 $CeO_2$ 완충층에 대한 연구

  • 김혜진 (한국산업기술대학교 에너지대학원) ;
  • 이종범 (한국산업기술대학교 에너지대학원) ;
  • 김병주 (한국산업기술대학교 에너지대학원) ;
  • 홍석관 (한국산업기술대학교 에너지대학원) ;
  • 이현준 (한국산업기술대학교 에너지대학원) ;
  • 권병국 (한국산업기술대학교 신소재공학과) ;
  • 이희균 (한국산업기술대학교 신소재공학과) ;
  • 홍계원 (한국산업기술대학교 신소재공학과)
  • Received : 2010.10.08
  • Accepted : 2011.02.18
  • Published : 2011.03.31

Abstract

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

Keywords

References

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