한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권5호
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  • Pages.392-397
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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이차이온질량분석기를 이용한 PZT 박막의 후열처리 온도에 따른 특성에 관한 연구

Study of Effect of PZT Thin Film Prepared in Different Post-Annealing Temperature Using SIMS

  • 심등 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 이경천 (성균관대학교 정보통신공학부) ;
  • 허원영 (성균관대학교 정보통신공학부) ;
  • 신현창 (성균관대학교 정보통신공학부) ;
  • 김현덕 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Shenteng, Shenteng (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Tae-Yong (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Kyung-Chun (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hur, Won-Young (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Shin, Hyun-Chang (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Hyun-Duk (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Song, Joon-Tae (Department of Information and Communication Engineering, Sungkyunkwan University)
  • 투고 : 2011.03.07
  • 심사 : 2011.04.23
  • 발행 : 2011.05.11
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초록

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

키워드

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