Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Effects of Interface Soaking on Strain Modulation in InAs/GaSb Strained-Layer Superlattices

계면 흡착에 의한 InAs/GaSb 초격자의 응력변조 효과

  • Shin, H.W. (Department of Physics, Kyung Hee University) ;
  • Choe, J.W. (Department of Physics, Kyung Hee University) ;
  • Kim, J.O. (Global Research Laboratory on Quantum Detector Technology, Nano Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Lee, S.J. (Global Research Laboratory on Quantum Detector Technology, Nano Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Kim, C.S. (Global Research Laboratory on Quantum Detector Technology, Nano Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Noh, S.K. (Global Research Laboratory on Quantum Detector Technology, Nano Materials Evaluation Center, Korea Research Institute of Standards and Science)
  • 신현욱 (경희대학교 물리학과) ;
  • 최정우 (경희대학교 물리학과) ;
  • 김준오 (한국표준과학연구원 나노소재평가센터 양자검출소자기술 글로벌연구실) ;
  • 이상준 (한국표준과학연구원 나노소재평가센터 양자검출소자기술 글로벌연구실) ;
  • 김창수 (한국표준과학연구원 나노소재평가센터 양자검출소자기술 글로벌연구실) ;
  • 노삼규 (한국표준과학연구원 나노소재평가센터 양자검출소자기술 글로벌연구실)
  • Received : 2010.10.17
  • Accepted : 2010.11.29
  • Published : 2011.01.30
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Abstract

In this study, the interface soaking effect in InAs/GaAs strained-layer superlattice (SLS) on crystalline phase modulation has been analyzed by the x-ray diffraction (XRD) curve. The strain variation induced by As and/or Sb soaking was determined by the separation angle between the substrate peak and the 0th-order superlattice satellite peak in the XRD spectra. Contrated that the As/InAs soaking arises minor GaAs-like interfacial layer, the Sb/GaSb soaking induces InSb-like one. The Fourier-transformed curves of the Pendellosung interference oscillation shows that the optimum soaking times of As/InAs and Sb/GaSb are 2 sec and 12 sec, at which the highest crystallineity has, respectively. An anomalous twin-peak phenomenon that a satellite peak splits into two peaks was observed in the SLS structure co-soaked by As and Sb at InAs${\rightarrow}$GaSb interfaces. We suggest that it may be resulted from coexistence of two kinds crystalline phases of InAsSb and GaAsSb due to intermixing of In${\leftrightarrow}$Ga and Sb${\leftrightarrow}$As.

본 연구에서는 InAs/GaSb 응력초격자(SLS)의 계면 흡착(soaking)에 의한 응력변조 효과를 X선회절(XRD)을 통하여 분석하였다. As과 Sb 흡착에 의하여 유도된 응력의 변화는 XRD 곡선의 기판피크과 0차 위성피크 사이의 분리각으로부터 조사하였으며, As/InAs 흡착은 약간의 GaAs-like 계면층을 유발하는 반면, Sb/GaSb 흡착은 InSb-like 계면상을 유도하는 것으로 분석되었다. Pendellosung 간섭진동의 Fourier 변환 곡선을 이용하여, [InAs/GaSb]-SLS 성장에서 결정성이 가장 우수한 최적 As/InAs와 Sb/GaSb의 흡착시간은 각각 2 sec와 10 sec임을 밝혔다. InAs${\rightarrow}$GaSb 계면에 As과 Sb를 동시에 흡착시킨 SLS에서 XRD 위성피크가 2개로 분할되는 특이한 쌍정현상이 관측되었는데, 이것은 계면에서 In${\leftrightarrow}$Ga 및 Sb${\leftrightarrow}$As 상호혼합에 의한 InSbAs와 GaAsSb의 2종의 결정상이 공존함으로써 발생한 현상으로 추정된다.

Keywords

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