플라즈마 도핑을 이용한 결정질 태양전지 에미터층 형성 연구

A Study on Emitter layer by Plasma Doping for Crystalline Silicon Solar Cells

  • 유동열 (한국기술교육대학교 전기전자통신공학과) ;
  • 노시철 (한국기술교육대학교 전기전자통신공학과) ;
  • 최정호 (한국기술교육대학교 전기전자통신공학과) ;
  • 김정환 (한국기술교육대학교 전기전자통신공학과) ;
  • 서화일 (한국기술교육대학교 전기전자통신공학과) ;
  • 김영철 (한국기술교육대학교 에너지신소재화학공학부)
  • Yu, Dong-Yeol (Dept. of Electrical & Electronic & Communication Engineering) ;
  • Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering) ;
  • Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering) ;
  • Kim, Jeong-Hwan (Dept. of Electrical & Electronic & Communication Engineering) ;
  • Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering) ;
  • Kim, Yeong-Cheol (School of Energy & Materials & Chemical Engineering, Korea University of Technology and Education)
  • 투고 : 2011.11.10
  • 심사 : 2011.12.15
  • 발행 : 2011.12.31

초록

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

키워드

참고문헌

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