Clean Technology (청정기술)

The Korean Society of Clean Technology (한국청정기술학회)
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Efficient Stripping of High-dose Ion-implanted Photoresist in Supercritical Carbon Dioxide

초임계 이산화탄소를 이용한 고농도이온주입 포토레지스트의 효율적인 제거

  • Kim, Do-Hoon (Divison of Image and Information Engineering, Pukyong National University) ;
  • Lim, Eu-Sang (Divison of Image and Information Engineering, Pukyong National University) ;
  • Lim, Kwon-Taek (Divison of Image and Information Engineering, Pukyong National University)
  • 김도훈 (부경대학교 이미지시스템 공학과) ;
  • 임의상 (부경대학교 이미지시스템 공학과) ;
  • 임권택 (부경대학교 이미지시스템 공학과)
  • Received : 2011.09.14
  • Accepted : 2011.10.24
  • Published : 2011.12.30
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Abstract

A mixture of supercritical carbon dioxide and a co-solvent was employed to strip a high-dose ion-implanted photoresist (HDIPR) from the surface of semiconductor wafers. The stripping efficiency was highly improved by the physical force generated from a ultrasonication tip inside the reactor. In addition, helium gas was injected in the reactor as a barrier gas before the introduction of pure supercritical $CO_2$ ($scCO_2$), which reduced the rinsing time significantly. The effect of co-solvents on the stripping efficiency was investigated. The wafer surfaces were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer.

고농도 이온 주입되어 경화된 포토레지스트(HDI PR)를 효과적으로 제거하기 위해 초임계 이산화탄소와 여러 가지 공용매를 사용하였다. 공용매에 의한 용해 방식으로는 경화된 PR층이 완벽하게 제거되지 않기 때문에 고압셀에 초음파 발생 팁을 부착하여 웨이퍼 표면에 물리적인 힘을 제공함으로서 제거 성능을 높이고 제거시간을 단축할 수 있었다. 또한, HDI PR 제거 반응 후에 초임계 이산화탄소와 서로 섞이지 않는 헬륨 가스를 셀 내부에 주입하여 내용물을 배출함으로서, PR 제거 반응 잔여물을 빠른 시간에 제거할 수 있었다. 공용매의 종류 및 농도, 반응 온도, 압력 변화에 따른 HDI PR 제거 특성을 조사하였으며, 웨이퍼 표면의 반응 전 후의 상태 및 성분을 scanning electron microscopy과 energy dispersive X-ray spectrometer를 이용하여 분석하였다.

Keywords

References

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