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Thermal Effect on Characteristics of IZTO Thin Films Deposited by Pulsed DC Magnetron Sputtering

  • Son, Dong-Jin (Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Ko, Yoon-Duk (Display Lab, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University) ;
  • Boo, Jin-Hyo (Department of Chemistry, Institute of Basic Science, Sungkyunkwan University) ;
  • Choa, Sung-Hoon (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology) ;
  • Kim, Young-Sung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • Received : 2010.12.09
  • Accepted : 2010.12.30
  • Published : 2011.03.20

Abstract

This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.

Keywords

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