Transactions on Electrical and Electronic Materials

  • 제12권1호
  • /
  • Pages.16-19
  • /
  • 2011
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

ONO Ruptures Caused by ONO Implantation in a SONOS Non-Volatile Memory Device

  • Kim, Sang-Yong (Department of Semiconductor System, Korea Polytechnic College IV) ;
  • Kim, Il-Soo (Department of Semiconductor System, Korea Polytechnic College IV)
  • 투고 : 2010.10.16
  • 심사 : 2010.12.28
  • 발행 : 2011.02.28
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

키워드

참고문헌

  1. M. H. White, D. A. Adams, and J. Bu, IEEE Circuits and Devices Mag. 16, 22 (2000) [DOI: 10.1109/101.857747].
  2. M. Boutchich, D. S. Golubovic , N. Akil , and M. van Duuren, Microelectron. Eng. 87, 41 (2010) [DOI: 10.1016/ j.mee.2009.05.019].
  3. M. P. M. Jank, M. Lemberger, A. J. Bauer, L. Frey, and H. Ryssel, Microelectron. Reliab. 41, 987 (2001) [DOI: 10.1016/s0026-2714(01)00053-1].
  4. S. Kumar and E. L. Russell, IEEE International Integrated Reliability Workshop Final Report (Lake Tahoe, CA 2001) p. 34-40.
  5. K. Mameno, H. Nagasawa, A. Nishida, and H. Fujiwara, Nucl Instrum Meth Phys Res B 121, 311 (1997). https://doi.org/10.1016/S0168-583X(96)00445-4
  6. P. Chakraborty, S. S. Mahato, T. K. Maiti, M. K. Bera, C. Mahata, S. K. Samanta, A. Biswas, and C. K. Maiti, Microelectron. Eng. 86, 299 (2009) [DOI: 10.1016/j.mee.2008.10.008].
  7. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, 2nd ed. (Lattice Press, Sunset Beach, 2002).
  8. J. H. Han, J. H. Kim, S. H. Lee, and C. Kim, Solid-State Electron. 49, 1857 (2005) [DOI: 10.1016/j.sse.2005.10.006].

피인용 문헌

  1. Effect of various sintering aids on the piezoelectric and dielectric properties of 0.98(Na0.5K0.5)NbO3–0.02Li0.04(Sb0.06Ta0.1)O3 ceramics vol.58, 2014, https://doi.org/10.1016/j.materresbull.2014.04.057
  2. Piezoelectric and ferroelectric properties of lead-free (1-x)(Na 1−y K y )(Nb 1−z Sb z )O 3 -xBaTiO 3 solid solution vol.512, 2017, https://doi.org/10.1016/j.physb.2017.02.024