The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지
DOI QR코드

DOI QR Code

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate

선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈

  • Jeong, Hae-Chang (Department of Radio Science and Engineering, Chungnam National University) ;
  • Oh, Hyun-Seok (Department of Radio Science and Engineering, Chungnam National University) ;
  • Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
  • Published : 2011.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

본 논문에서는 선택적 산화 알루미늄(SAAO: Selectively Anodized Aluminum Oxide) 기판을 이용하여 2.5 GHz 8 W급 소형 GaN HEMT 전력 증폭기 모듈을 설계, 제작하였다. SAAO 기판 공정은 최근 Wavenics사에서 제안한 특허 기술로서, 알루미늄을 웨이퍼로 이용한다. 본 연구에 사용된 능동 소자는 최근 발표된 TriQuint사의 칩 형태 의 GaN HEMT이다. 최적의 임피던스는 수동 조정 소자가 내장된 지그를 사용하여 실험적으로 결정하였다. 결정된 임피던스를 이용하여, 입 출력 임피던스 정합 회로를 EM co-시뮬레이션을 이용하여 F급으로 설계를 수행하였으며, SAAO 기판에 구현하였다. 이때, 소형의 패키지(모듈)에 집적하기 위하여 인덕터와 커패시터는 각각 spiral inductor, single layer capacitor를 사용하였다. 소형으로($4.4{\times}4.4\;mm^2$) 패키지된 전력 증폭기 모듈의 경우, 출력은 8 W, 효율은 40 % 그리고 2차 및 3차 고조파에 대한 고조파 억제는 30 dBc 이상의 특성을 보였다.

Keywords

References

  1. S. H. Shin, Y. S. Kwon, "Selectively anodized aluminum substrates for microwave power module package", Proc. of the 55th Electronic Components and Technology Conference, vol. 2, pp.1904-1908, May 2005. https://doi.org/10.1109/ECTC.2005.1442058
  2. S. K. Yeo, J. H. Chun, K. M. Kim, J. M. Yook, and Y. S. Kwon, "An X-band high power amplifier module package using selectively anodized aluminum substrate", Proc. of the 37th EUMC, pp. 1357-1360, Oct. 2007. https://doi.org/10.1109/EUMC.2007.4405455
  3. S. K. Yeo, C. H. Kim, J. H. Ahn, J. H. Chun, and Y. S. Kwon, "A compact high power T/R module for X-band phased array radar applications using an anodized aluminum substrate", Proc. of the 39th EUMC, pp. 1357-1360, Sep. 2009.
  4. IPD Design Manual, RF Passive Circuit Foundry on SAAO, Wavenics, [Online] Available: http://wavenics.com/
  5. 정해창, 오현석, 허윤성, 염경환, 김경민, "Wi-MAX 대역 GaN HEMT 4 W 소형 전력 증폭기모듈 설계", 한국전자파학회논문지, 22(2), pp. 162-172, 2011년 2월.
  6. TGF2023-02, 12 Watt Discrete Power GaN on SiC HEMT, TriQuint Semiconductor, [Online] Available: http://triquint.com/
  7. C580274C, Leaded Power Amplifier Package, Stratedge, [Online] Available: http://stratedge.com/
  8. CMPA0060002D, 2 Watt, 20 MHz-6000 MHz GaN HEMT MMIC Power Amplifier, Cree, [Online] Available: http://cree.com/
  9. CGH27015, 15 W, 28 V, GaN HEMT for Linear Communications Ranging from VHF to 3 GHz, Cree, [Online] Available: http://cree.com/
  10. NPTB00004, Gallium Nitride 28 V, 5 W RF Power Transistor, Nitronex, [Online] Available: http://Nitronex.com/

Cited by

  1. Design of a GaN HEMT Power Amplifier Using Output Matching Circuit with Arbitrary Harmonic Impedances vol.24, pp.11, 2013, https://doi.org/10.5515/KJKIEES.2013.24.11.1034