Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nonstoichiometric Addition of ZrO2 and NiO to the Ba(Zn1/3Ta2/3)O3 Microwave Dielectrics

Ba(Zn1/3Ta2/3)O3 마이크로파 유전체에서 ZrO2와 NiO의 비화학양론적 첨가

  • Nam, Kyung-Deog (High Temperature Energy Materials Research Center, KIST) ;
  • Kang, Sung-Woo (The Center of Green Materials Technology, School of Advanced Materials Engineering, Andong National University) ;
  • Kim, Tae-Heui (The Center of Green Materials Technology, School of Advanced Materials Engineering, Andong National University) ;
  • Sim, Soo-Man (School of Material Science and Engineering, Hongik University) ;
  • Choi, Sun-Hee (High Temperature Energy Materials Research Center, KIST) ;
  • Kim, Joo-Sun (High Temperature Energy Materials Research Center, KIST)
  • 남경덕 (한국과학기술연구원 고온에너지재료연구센터) ;
  • 강성우 (안동대학교 신소재공학부 청정소재기술연구센터) ;
  • 김태희 (안동대학교 신소재공학부 청정소재기술연구센터) ;
  • 심수만 (홍익대학교 재료공학부) ;
  • 최선희 (한국과학기술연구원 고온에너지재료연구센터) ;
  • 김주선 (한국과학기술연구원 고온에너지재료연구센터)
  • Received : 2011.10.10
  • Accepted : 2011.10.28
  • Published : 2011.12.01
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Abstract

We investigated the physical properties of stoichiometric and non-stoichiometric oxide doped complex perovskite, $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics and their impacts on the microwave dielectric performances using various characterization techniques such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and network analyzer. According to the measurement of lattice constant changes, anomalous lattice volume contraction of $ZrO_2$ doped $Ba(Zn_{1/3}Ta_{2/3})O_3$ sample only showed the dielectric quality factor enhancements, which was due to the lattice volume contraction as well as the 1:2 B-site cation ordering. In addition, NiO doping was useful to the stabilization of temperature coefficient of resonance frequency.

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References

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