Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Comparative Analysis of Flicker Noise and Reliability of NMOSFETs with Plasma Nitrided Oxide and Thermally Nitrided Oxide

Plasma Nitrided Oxide와 Thermally Nitrided Oxide를 적용한 NMOSFET의 Flicker Noise와 신뢰성에 대한 비교 분석

  • 이환희 (충남대학교 전자전파정보통신공학과) ;
  • 권혁민 (충남대학교 전자전파정보통신공학과) ;
  • 권성규 (충남대학교 전자전파정보통신공학과) ;
  • 장재형 (충남대학교 전자전파정보통신공학과) ;
  • 곽호영 (충남대학교 전자전파정보통신공학과) ;
  • 이성재 (충남대학교 전자전파정보통신공학과) ;
  • 고성용 ;
  • 이원묵 ;
  • 이희덕 (충남대학교 전자전파정보통신공학과)
  • Received : 2011.11.01
  • Accepted : 2011.11.15
  • Published : 2011.12.01
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Abstract

In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/$SiO_2$ interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.

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References

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