References
- J. B. Lee, I. Kim, H. K. Kwon, and B. D. Choe, Appl. Phys. Lett. 62, 1620 (1993). https://doi.org/10.1063/1.108605
- L. B. Chang, K. Y. Cheng, and C. C. Liu, Jpn. J. Appl. Phys. 27, 1145 (1988). https://doi.org/10.1143/JJAP.27.1145
- H. Kroemer, J. Vac. Sci. Techol. B1(2), 126 (1983).
- S. L. Jang, Solid State Electronics 34, 373 (1991). https://doi.org/10.1016/0038-1101(91)90166-V
- S. A Tabatabaei, A. A Iliadis, E. C. Colin, and E. C. Wood, J. Electronics Materials 24, 87 (1995). https://doi.org/10.1007/BF02659627
- G. Attolini, C. Bocchi, F. Germini, C. Pelosi, A. Parisini, L. Tarricone, R. Kùdela, and S. Hasenohrl, Materials Chemistry and Physics 66, 246 (2000). https://doi.org/10.1016/S0254-0584(00)00319-9
- X. Z. Shang, P. J. Niu, B. N. Mao, W. X. Wang, L. W. Guo, Q. Huang, and J. M. Zhou, Solid State Communications 138, 114 (2006). https://doi.org/10.1016/j.ssc.2006.02.025
- M. Begotti, M. Longo, R. Magnanini, A. Parisini, L. Tarricone, C. Bocchi, F. Germini, L. Lazzarini, L. Nasi, and M. Geddo, Applied Surface Science 222, 423 (2004). https://doi.org/10.1016/j.apsusc.2003.09.011
- M. Murtagh, J. T. Beechinor, N. Cordero, P. V. Kelly, G. M. Crean, and S. W. Bland, Materials Science and Engineering B66, 185 (1999). https://doi.org/10.1016/S0921-5107(99)00088-4
- S. Datta, A. Bhattacharya, M. R. Gokhale, S. P. Pai, J. John, and B. M. Arora, Journal of Crystal Growth 241, 115 (2002). https://doi.org/10.1016/S0022-0248(02)01207-1
- J. Lagowski, W. Walukiewicz, M. M. G. Slusarczuk, and H. C. Gatos, J. Appl. Phys. 50, 5059 (1979). https://doi.org/10.1063/1.325610
- 유재인, 김도균, 김근형, 배인호, 김인수, 한병국, 한국진공학회 9, 116 (2000).
- J. S. Roberts, G. B. Scott, and J. P, Growers. J. Appl. Phys. 52, 4018 (1981). https://doi.org/10.1063/1.329211
- W. Liu, D. Jiang, and Y. Zhang, J. Appl. Phys. 77, 4564 (1995). https://doi.org/10.1063/1.359419
- L. Kronik and Y. Shapira, Surface Science Reports 37, 1, (1999) https://doi.org/10.1016/S0167-5729(99)00002-3
- Y. P. Varshni, Physica 34, 149 (1967). https://doi.org/10.1016/0031-8914(67)90062-6
- L. Pevesi, F. Piazze, A. Rudra, J. F. Carlin, and M. Hegema, Phys. Rev. B 44, 9052 (1991). https://doi.org/10.1103/PhysRevB.44.9052
- C. Mejia-Garcia, A. Caballero-Rosas, M. Lopez- Lopez, A. Winter, H. Pascher, and J. L. Lopez- Lopez, Thin Solid Films 518, 1825 (2010). https://doi.org/10.1016/j.tsf.2009.09.041
- 김정화, 조현준, 배인호, 한국진공학회지 19, 134 (2010).
- T. Prutskij, C. Pelosi, and R. A. Brito-Ort, Microelectronics Journal 36, 374 (2005). https://doi.org/10.1016/j.mejo.2005.02.056
- P. Lautenschlager, M. Garriga, S. Logothetidis, and M. Cardona, Phys. Rev. B 35, 9174 (1987). https://doi.org/10.1103/PhysRevB.35.9174
Cited by
- Suppression of Switching Noise in a Quantum Device Based on GaAs/AlxGa1-xAs Two Dimensional Electron Gas System vol.21, pp.3, 2012, https://doi.org/10.5757/JKVS.2012.21.3.151