Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering

  • Bang, Joon-Ho (Department of Materials Science and Engineering, Pusan National University) ;
  • Park, Se-Hun (Department of Materials Science and Engineering, Pusan National University) ;
  • Cho, Sang-Hyun (Nano Convergence Practical Application Center, Daegu Technopark) ;
  • Song, Pung-Keun (Department of Materials Science and Engineering, Pusan National University)
  • Received : 2010.08.29
  • Accepted : 2010.08.30
  • Published : 2010.08.31
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Abstract

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{\times}10^{-4}{\Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

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References

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