Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of Optical Receiver Using Independent-Gate-Mode Double-Gate MOSFETs

Independent-Gate-Mode Double-Gate MOSFET을 이용한 Optical Receiver 설계

  • Kim, Yu-Jin (Department of Electronic Engineering, Ewha Womans University) ;
  • Jeong, Na-Rae (Department of Electronic Engineering, Ewha Womans University) ;
  • Park, Sung-Min (Department of Electronic Engineering, Ewha Womans University) ;
  • Shin, Hyung-Soon (Department of Electronic Engineering, Ewha Womans University)
  • 김유진 (이화여자대학교 전자공학과) ;
  • 정나래 (이화여자대학교 전자공학과) ;
  • 박성민 (이화여자대학교 전자공학과) ;
  • 신형순 (이화여자대학교 전자공학과)
  • Received : 2010.01.29
  • Accepted : 2010.07.12
  • Published : 2010.08.25
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Abstract

Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET overcomes the limitation of bulk-MOSFET's channel controllability and enables to control the front and back-gate voltages independently. Therefore, circuit designs utilizing the IGM-DG MOSFETs provide the advantage of setting 4-terminal freely, hence achieving not only the performance improvement but also the larger scale integration. This paper presents a 15Gb/s optical receiver with a 1.0V power supply voltage, which consists of a transimpedance amplifier (TIA), a feedforward limiting amplifier (LA), and an output buffer. HSPICE simulations were conducted to confirm the circuit performance, and also to verify the circuit stability issues which may occur from the variations of process and supply voltage.

Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET은 기존의 bulk-MOSFET에 비해 향상된 채널 제어능력을 가지며, front-게이트와 back-게이트를 서로 다른 전압으로 구동가능하다는 이점을 가진다. 따라서, 이를 이용한 회로설계는 4-terminal의 자유도를 이용함으로써 회로성능의 향상 뿐 아니라 집적도 향상을 기대할 수 있다. 본 논문에서는 IGM-DG MOSFET의 장점을 이용하여 TIA, feedforward LA, 및 OB로 구성된 15Gb/s 광수신기를 설계하고, HSPICE 시뮬레이션을 통한 회로성능 검증 및 외부환경과 소자의 특성변화에 따른 안정성을 검증하였다.

Keywords

References

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