한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제23권11호
  • /
  • Pages.837-842
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  • 2010
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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여러 탄화조건에 따라 성장된 단결정 3C-SiC 박막의 특성

Properties of Single Crystalline 3C-SiC Thin Films Grown with Several Carbonization Conditions

  • 심재철 (울산대학교 전기전자정보시스템공학부) ;
  • 정귀상 (울산대학교 전기전자정보시스템공학부)
  • 투고 : 2010.07.15
  • 심사 : 2010.10.22
  • 발행 : 2010.11.01
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초록

This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, $C_3H_8$ flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal $C_3H_8$ flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.

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참고문헌

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