Journal of information and communication convergence engineering

  • 제8권4호
  • /
  • Pages.449-452
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  • 2010
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  • 2234-8255(pISSN)
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  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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Design of DGMOSFET for Optimum Subthreshold Characteristics using MicroTec

  • Jung, Hak-Kee (Department of Electronic Eng., Kunssan National University) ;
  • Han, Ji-Hyeong (Department of Electronic Eng., Kunssan National University)
  • 투고 : 2010.07.01
  • 심사 : 2010.07.01
  • 발행 : 2010.08.31
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초록

We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low power consumption. As device size scaled down, the controllability of dimensions and oxide thickness is very low. We have analyzed the short channel effects for the variation of channel dimensions, and found the design conditions of DGMOSFET having the optimum subthreshold characteristics for digital applications.

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참고문헌

  1. K. K. Young, "SCEs in fully depleted SOI MOSFETs," IEEE Trans. Electron Devices vol. ED-36, 1989, pp. 399-402.
  2. H. K. Jung and S. Dimitrijev, "Analysis of Subthreshold Carrier Transport for Ultimate DGMOSFET," IEEE Trans. Electron Devices, vol. ED-53, 2006, pp. 685-691.
  3. MicroTec Semiconductor Process and Device Simulator, Version 4.0 for windows, Siborg Systems Inc, 2003, pp63-95.
  4. Q.Chen, B.Agrawal and J.D.Meindl, "A Comprehensive Analytical Subthreshold Swing(S) Model for Double-Gate MOSFETs", IEEE Trans. Electron Devices, vol. 49, no.6, 2002, pp.1086-1090. https://doi.org/10.1109/TED.2002.1003757
  5. D.S.Havaldar, G.Katti, N.DasGupta and A.DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 53, no.4, 2006, pp.737-741. https://doi.org/10.1109/TED.2006.870874