한국신뢰성학회지:신뢰성응용연구 (Journal of Applied Reliability)

  • 제10권1호
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  • Pages.65-71
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  • 2010
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  • 1738-9895(pISSN)
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  • 2733-8320(eISSN)
한국신뢰성학회 (The Korean Reliability Society)
권호 표지

Nanoscale NAND SONOS memory devices including a Seperated double-gate FinFET structure

  • Kim, Hyun-Joo (Dept. of Information Display, Hanyang University) ;
  • Kim, Kyeong-Rok (Dept. of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Kwack, Kae-Dal (Dept. of Information Display, Hanyang University)
  • 투고 : 2009.11.19
  • 심사 : 2010.01.08
  • 발행 : 2010.03.25
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초록

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

키워드

참고문헌

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