Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate

내장된 전송 게이트를 가지는 n-well/gate가 연결된 구조의 PMOSFET형 광검출기의 동작 범위 확장

  • Lee, Soo-Yeun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Seo, Sang-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kong, Jae-Sung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Jo, Sung-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Choi, Kyung-Hwa (Department of Sensor and Display Engineering, Kyungpook National University) ;
  • Choi, Pyung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 이수연 (경북대학교 전자전기컴퓨터학부) ;
  • 서상호 (경북대학교 전자전기컴퓨터학부) ;
  • 공재성 (경북대학교 전자전기컴퓨터학부) ;
  • 조성현 (경북대학교 전자전기컴퓨터학부) ;
  • 최경화 (경북대학교 센서 및 디스플레이공학과) ;
  • 최평 (경북대학교 전자전기컴퓨터학부) ;
  • 신장규 (경북대학교 전자전기컴퓨터학부)
  • Received : 2010.03.18
  • Accepted : 2010.07.14
  • Published : 2010.07.31
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Abstract

We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 ${\mu}m$ standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

Keywords

References

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