Ion Beam-based Surface Modification of Polyimide Films for Adhesion Improvement with Deposited Metal Layer

  • Cho, Hwang-Woo (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute) ;
  • Jung, Chan-Hee (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute) ;
  • Hwang, In-Tae (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute) ;
  • Choi, Jae-Hak (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute) ;
  • Nho, Young-Chang (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute)
  • 투고 : 2010.11.04
  • 심사 : 2010.11.12
  • 발행 : 2010.12.30

초록

In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

키워드

과제정보

연구 과제 주관 기관 : National Research Foundation