Cooper pair transistor에서 gate voltage에 의한 임계전류의 진동

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

  • Song, W. (Korea Research Institute of Standards and Science) ;
  • Chong, Y. (Korea Research Institute of Standards and Science) ;
  • Kim, N. (Korea Research Institute of Standards and Science)
  • 투고 : 2010.03.24
  • 심사 : 2010.04.05
  • 발행 : 2010.04.30

초록

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

키워드

참고문헌

  1. Y. Nakamura, Y. A. Pashkin, and J. S. Tsai, Nature 398, 786 (1999). https://doi.org/10.1038/19718
  2. D. Vion, A. Aassime, A. Cottet, P. Joyez, H. Pothier, C. Urbina, D. Esteve, and M. H. Devoret, Science 296, 886 (2002). https://doi.org/10.1126/science.1069372
  3. V. Ambegaokar and A. Baratoff, Phys. Rev. Lett. 10, 486 (1963). https://doi.org/10.1103/PhysRevLett.10.486
  4. P. W. Anderson, Lectures on the Many Body Problem vol. 2, edited by E. Caianello (Academic Press, New York, 1964).
  5. G.-L. Ingold and Y. V. Nazarov, in Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, edited by H. Grabert and M. Devoret (Plenum Press, New York, 1992).
  6. P. Joyez, P. Lafarge, A. Filipe, D. Esteve, and M. H. Devoret, Phys. Rev. Lett. 72, 2458 (1994). https://doi.org/10.1103/PhysRevLett.72.2458
  7. W. A. Maassen van den Brink, L. J. Geerligs, and G. Schon, Phys. Rev. Lett. 67, 3030 (1991). https://doi.org/10.1103/PhysRevLett.67.3030
  8. J. Aumentado, M. W. Keller, J. M. Martinis, and M. H. Devoret, Phys. Rev. Lett. 92, 066802 (2004). https://doi.org/10.1103/PhysRevLett.92.066802