Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dependence of Device Performance and Reliability on Channel Direction in PMOSFET's

PMOSFET에서 채널 방향에 대한 소자 성능 의존성

  • Bok, Jung-Deuk (Department of Electronics Engineering, Chungnam National University) ;
  • Park, Ye-Ji (Department of Electronics Engineering, Chungnam National University) ;
  • Han, In-Shik (Department of Electronics Engineering, Chungnam National University) ;
  • Kwon, Hyuk-Min (Department of Electronics Engineering, Chungnam National University) ;
  • Park, Byoung-Seok (Department of Electronics Engineering, Chungnam National University) ;
  • Park, Sang-Uk (Department of Electronics Engineering, Chungnam National University) ;
  • Lim, Min-Gyu (SMS, MagnaChip Semiconductor) ;
  • Chung, Yi-Sun (SMS, MagnaChip Semiconductor) ;
  • Lee, Jung-Hwan (SMS, MagnaChip Semiconductor) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • 복정득 (충남대학교 전자전파정보통신공학부) ;
  • 박예지 (충남대학교 전자전파정보통신공학부) ;
  • 한인식 (충남대학교 전자전파정보통신공학부) ;
  • 권혁민 (충남대학교 전자전파정보통신공학부) ;
  • 박병석 (충남대학교 전자전파정보통신공학부) ;
  • 박상욱 (충남대학교 전자전파정보통신공학부) ;
  • 임민규 (매그나칩반도체 SMS) ;
  • 정의선 (매그나칩반도체 SMS) ;
  • 이정환 (매그나칩반도체 SMS) ;
  • 이희덕 (충남대학교 전자전파정보통신공학부)
  • Received : 2010.02.23
  • Accepted : 2010.05.23
  • Published : 2010.06.01
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Abstract

In this paper, we investigated the dependence of device performance and hot carrier lifetime on the channel direction of PMOSFET. $I_{D.sat}$ vs. $I_{Off}$ characteristic of PMOSFET with <100> channel direction is greater than that with <110> channel direction because carrier mobility of <100> channel direction is greater than that of <110> channel direction. However, hot carrier lifetime for <110> channel direction is much lower than that with <110> channel due to the greater impact ionization rate in the <100> channel direction. Therefore, concurrent consideration of reliability characteristics and device performance is necessary for channel strain engineering of MOSFETs.

Keywords

References

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