통합자연과학논문집 (Journal of Integrative Natural Science)

조선대학교 기초과학연구원 (The Basic Science Institute Chosun University)
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Fabrication and Characterization of DBR Porous Silicon Chip for the Detection of Chemical Nerve Agents

  • 투고 : 2010.12.07
  • 심사 : 2010.12.23
  • 발행 : 2010.12.31
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초록

Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of $P^{{+}{+}}$-type silicon wafer of resistivity between 0.1 $m{\Omega}cm$ with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor (TEP, DMMP, DEEP) at room temperature.

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참고문헌

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