반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

RF magnetron sputtering법으로 형성된 ZnO 박막의 투명반도체 특성

The Transparent Semiconductor Characteristics of ZnO Thin Films Fabricated by the RF Magnetron Sputtering Method

  • Kim, Jong-Wook (Electronic Engineering of Cheongju University) ;
  • Hwang, Chang-Su (Department of Physics, Korea Air Force Academy) ;
  • Kim, Hong-Bae (school of Electronic and Information Engineering, Cheongju University)
  • 발행 : 2010.03.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

키워드

참고문헌

  1. Wang, Z. Y., Hu, L. Z., Zhao, J., Sun, J., Wang, Z.J. "Effect of the variation of temperature on the structural and optical properties of AZO thin films prepared on Si (1 1 1) substrates using PLD", Vacuum, Vol. 78, pp. 53-57, 2005. https://doi.org/10.1016/j.vacuum.2004.12.014
  2. Choi, B. K., Chang, D. H., Yoon, Y. S., Kang, S. J. "Optical characterization of AZO thin films deposited by Sol-gel Method", J. Mater. Sci: Mater. Electron, Vol. 17, pp. 1011-1015, 2006. https://doi.org/10.1007/s10854-006-9036-0
  3. Tun, C. J., Sheu, J. K., Pong, B. J., Lee, M.L., Hsieh, C. K., Hu, C. C., Chi, G. C. "Enhanced Light Output of GaN-ased Power LEDs With Transparent Al-Doped AZO Current Spreading Layer", IEEE Photon. Technol. Lett, Vol. 18, pp.274-276, 2006. https://doi.org/10.1109/LPT.2005.861987
  4. Kuo, S. Y., Chen, W. C., Lai, F. I. "Effects of Doping Concentration and Annealing Temperature on Properties of Highly-oriented Al-dopoed AZO films", J. Cryst. Growth, Vol. 287, pp. 78-84, 2006. https://doi.org/10.1016/j.jcrysgro.2005.10.047
  5. Zafar, S., Ferekides, C.S., Morel, D.L. "Characterization and analysis of AZO:Al deposited by reactive magnetron sputtering", J. Vac. Sci. Technol. Vol. A13, No4, pp. 2177-2182, 1955.
  6. Kang, T. D., Lee, H. S., Park, W. I., Yi, G. C. "Spectroscopic Ellipsometric Study of AZO and Zn1xMgxO Thin Films Grown on (0001) Sapphire Substrate", J. Korean Pyhs. Soc, Vol. 44, pp. 129-133, 2004.
  7. Wang, M. S., Kim, E. J., Chung, J. S., Shin, E. W., Hahn, S. H., Lee, K. E., Park, C. H. "Influence of annealing Temperature on the Structural and Optical Properties of Sol-gel Prepared AZO Thin Films", Phys. Stat. Sol. (a), Vol. 203, pp. 2418-2425, 206. https://doi.org/10.1002/pssa.200521398
  8. Kim, K. H., Park, K. C., Ma, D. Y., "Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering", J. Appl. Phys, Vol. 81, pp. 7764-7772, 1997. https://doi.org/10.1063/1.365556
  9. Zhang, Y., Du, G., Liu, B. "Effect of AZO Buffer Layer thickness on properties of AZO thin films deposited by low pressure MOCVD", J. Cryst. Growth, Vol. 262, pp. 456-460, 2004. https://doi.org/10.1016/j.jcrysgro.2003.10.079
  10. Kong, D. H., Choi, W. C., Shin, Y. C., Park, J. H., Kim, T. G. "Role of oxygen in green emission from AZO thin films", J. Korean. Phys. Soc, Vol. 48, pp. 1214-1217, 2006.
  11. Bagnall, D. M., Chen, Y. F., Shen, M. Y., Zhu, Z., Goto, T., Yao, T. "Room temperature excitonic stimulated emission from Znic Oxide epilayers grown by plasma-assisted MBE", J. Cryst. Growth, Vol. 184/185, pp. 605-609, 1998.
  12. Cullity, B. D., Elements of X-ray Diffractions, Addison-Wesley, Reading, MA, pp. 102, 1978.
  13. Park, Y. W., Shin, H. Y., Park, J. H., Chang, C. Y., Sim, S. H., Choi, J. W., Yoon, S. J., Kim, H. J., Kim, H. J. "A study on the ZnO thin film SAW filter by TF sputter", J.of KIEEME, Vol.14, No.6, pp.481-486, 2001.
  14. Yamada, T., Morizane, T., Arimitsu, T., Miyake, A., Makino, H., Yamamoto, N., Yamamoto, T., "Application of low resistivity Ga-doped ZnO films to transparent electromagnetic interference shielding material", Thin solid films, Vol. 517, pp. 1027-1031, 2008. https://doi.org/10.1016/j.tsf.2008.06.047
  15. Chen, X., Guan, W., Fang, G., Zhao, X. Z. "Influence of substrate temperature and post-treatment on the properties of AZO:Al thin films prepared by pulsed laser deposition", Appl. Surf. Sci, Vol. 252, pp. 1561-1567, 2005. https://doi.org/10.1016/j.apsusc.2005.02.137
  16. Semelius, B. E., Berggren, K. F., Jin, Z. C., Hamberg, I., Granqvist, C. G. "Band gap tailoring of AZO by means of heavy Al doping", Phys. Rev. B, Vol. 37, pp. 10244-10248, 1988. https://doi.org/10.1103/PhysRevB.37.10244