Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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Laser Micro-drilling of Sapphire/silicon Wafer using Nano-second Pulsed Laser

나노초 펄스 레이저 응용 사파이어/실리콘 웨이퍼 미세 드릴링

  • 김남성 ((주)이오테크닉스 레이저 응용 연구소) ;
  • 정영대 ((주)이오테크닉스 레이저 응용 연구소) ;
  • 성천야 ((주)이오테크닉스 레이저 응용 연구소)
  • Published : 2010.02.01
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Abstract

Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.

Keywords

References

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