한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제23권4호
  • /
  • Pages.293-297
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  • 2010
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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RF Power에 따른 Amorphous-InGaZnO 박막의 특성 변화

The Characteristic Changes of Amorphous-InGaZnO Thin Film according to RF Power

  • 김상훈 (청주대학교 전자공학과) ;
  • 박용헌 (공군사관학교 물리학과) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • 발행 : 2010.04.01
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초록

We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which $In_2O_3$, $Ga_2O_3$ and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 $cm^2/V{\cdot}s$ at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.

키워드

참고문헌

  1. D.-H. Kim, J.-K. Kang, K.-J. Yang, Y. S. Do, S.-J. Sung, D.-H. Son, and B.-D. Choi, "Technological status and prospect of oxide thin film transistors", KIC News, Vol. 11, No. 5, p. 1, 2008.
  2. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors", Appl. Phys. Lett., Vol. 82, No. 5, p. 733, 2003. https://doi.org/10.1063/1.1542677
  3. J. F. Wager, “Transparent electronics”, Science, Vol. 300, No. 5623, p. 1245, 2003. https://doi.org/10.1126/science.1085276
  4. H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous oxide channel TFTs”, Thin Solid Films, Vol. 516, No. 7, p. 1516, 2008. https://doi.org/10.1016/j.tsf.2007.03.161
  5. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, "Recent advances in ZnO transparent thin film transistors", Thin Solid Films, Vol. 487, No. 1-2, p. 205, 2005. https://doi.org/10.1016/j.tsf.2005.01.066
  6. R. Martins, P. Barquinha, A. Pimentel, L. Pereira, E. Fortunato, D. Kang, I. Song, C. Kim, J. Park, and Y. Park, "Electron transport in single and multicomponent n-type oxide semiconductors", Thin Solid Films, Vol. 516, No. 7, p. 1322, 2008. https://doi.org/10.1016/j.tsf.2007.03.158
  7. Y. L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Peaton, I. I. Kravchenko, and J. M. Zavada, "Improved long-term thermal stability of InGaN/GaN multiple quantum well lightemitting diodes using TiB2- and Ir-based p-Ohmic contacts", Appl. Phys. Lett., Vol. 90, No. 24, p. 242103, 2007. https://doi.org/10.1063/1.2748306
  8. R. E. Presley, C. L. Munsee, C.-H. Park, D. Hong, J. F. Wager, and D. A. Keszler, "Tin oxide transparent thin-film transistors", J. Phys. D: Appl. Phys., Vol. 37, p. 2810, 2004. https://doi.org/10.1088/0022-3727/37/20/006
  9. T. Iwasaki, H. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system", Appl. Phys. Lett., Vol. 90, p. 242114, 2007. https://doi.org/10.1063/1.2749177
  10. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, "Zn-In-O based thin-film transistors: Compositional dependence", Phys. Stat. Sol., Vol. 205, No. 8, p. 1915, 2008. https://doi.org/10.1002/pssa.200778909
  11. H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application", Journal of Non-Crystalline Solids, Vol. 352, No. 9-20, p. 851, 2006. https://doi.org/10.1016/j.jnoncrysol.2006.01.073
  12. A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, "Transparent, high mobility InGaZnO thin films deposited by PLD", Thin Solid Films, Vol. 516, No. 7, p. 1326, 2008. https://doi.org/10.1016/j.tsf.2007.03.153
  13. M. Ito, C. Miyazaki, M. Ishizaki, M. Kon, N. Ikeda, T. Okubo, R. Matsubara, K. Hatta, Y. Ugajin, and N. Sekine, "Application of amorphous oxide TFT to electrophoretic display", Journal of Non-Crystalline Solids, Vol. 354, No. 19-25, p. 2777, 2008 https://doi.org/10.1016/j.jnoncrysol.2007.10.083
  14. Chen, X., Guan, W., Fang, G., and Zhao, X. Z., "Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition", Appl. Surf. Sci., Vol. 252, No. 5, p. 1561, 2005. https://doi.org/10.1016/j.apsusc.2005.02.137
  15. E. Terzini, P. Thiakan, and C. Minarini, “Properties of ITO thin films deposited by RF magnetron sputtering at elevated substrate temperature”, Mater. Sci. Eng. Vol. B77, p. 110, 2000.

피인용 문헌

  1. Effect of Ag Underlayer Thickness on the Electrical and Optical Properties of IGZO/Ag Layered Films vol.27, pp.5, 2014, https://doi.org/10.12656/jksht.2014.27.5.230