Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Synthesis and Characterization of Al-Doped Zinc Oxide Films by an Radio Frequency Magnetron Sputtering Method for Transparent Electrode Applications

  • Seo, Jae-Keun (Department of Electrical Engineering, Hanbat National University) ;
  • Ko, Ki-Han (Department of Electrical Engineering, Hanbat National University) ;
  • Cho, Hyung-Jun (Department of Electrical Engineering, Hanbat National University) ;
  • Choi, Won-Seok (Department of Electrical Engineering, Hanbat National University) ;
  • Park, Mun-Gi (LG Display Co., Ltd.) ;
  • Seo, Kyung-Han (LG Display Co., Ltd.) ;
  • Park, Young (Korea Railroad Research Institute) ;
  • Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University)
  • Published : 2010.02.28
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Abstract

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

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