Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio

  • Park, Ju-Yun (Department of Chemistry, Pukyong National University) ;
  • Heo, Jin-Kook (Department of Chemistry, Pukyong National University) ;
  • Kang, Yong-Cheol (Department of Chemistry, Pukyong National University)
  • Published : 2010.02.20
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Abstract

Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic $ZrO_2$ ($\bar{1}31$). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing $O_2$ gas ratio.

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