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전해증착 Cu(In,Ga)Se2 태양전지 박막의 열처리 특성

Annealing Characteristics of Electrodeposited Cu(In,Ga)Se2 Photovoltaic Thin Films

  • 채수병 (충북대학교 신소재공학과(산업과학기술연구소)) ;
  • 신수정 (충북대학교 신소재공학과(산업과학기술연구소)) ;
  • 최재하 (충북대학교 신소재공학과(산업과학기술연구소)) ;
  • 김명한 (충북대학교 신소재공학과(산업과학기술연구소))
  • Chae, Su-Byung (Department of Advanced Materials Engineering, Chungbuk National University (Research Institute of Industrial Science and Technology)) ;
  • Shin, Su-Jung (Department of Advanced Materials Engineering, Chungbuk National University (Research Institute of Industrial Science and Technology)) ;
  • Choi, Jae-Ha (Department of Advanced Materials Engineering, Chungbuk National University (Research Institute of Industrial Science and Technology)) ;
  • Kim, Myung-Han (Department of Advanced Materials Engineering, Chungbuk National University (Research Institute of Industrial Science and Technology))
  • 투고 : 2010.10.28
  • 심사 : 2010.11.19
  • 발행 : 2010.12.27

초록

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

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참고문헌

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