Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Analysis of the electrical characteristics of the novel TIGBT with additional pMOS

새로운 구조의 pMOS 삽입형 TIGBT의 전기적 특성 분석

  • Lee, Hyun-Duck (Department of Electronics Engineering, Seokyeoung University) ;
  • Won, Jong-Il (Department of Electronics Engineering, Seokyeoung University) ;
  • Yang, Yil-Suk (Electronics and Telecommunications Research Institute) ;
  • Koo, Yong-Seo (Electronics and Electrical Engineering, Dankook University)
  • Received : 2010.03.02
  • Published : 2010.04.26
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Abstract

In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).

본 논문에서는 기존 TIGBT의 구조적 한계로 인한 순방향 전압강하와 스위칭 손실간의 트레이드-오프 관계를 극복하고, 좀 더 우수한 전기적 특성을 갖는 새로운 구조의 pMOS 삽입형 트렌치 TIGBT를 제안하였다. 제안된 구조는 TIGBT소자의 셀(Cell)과 셀 사이에 존재하는 폴리(poly) 게이트 영역에 pMOS를 형성시킨 구조로 n-드리프트 층으로의 전자, 정공의 주입효율을 증가시켜 기존 구조보다 더 낮은 온-저항과 빠른 스위칭 손실을 얻도록 설계된 구조이다. 시뮬레이션 결과 제안된 구조의 단일 소자인 경우 순방향 전압강하와 스위칭 특성은 각각 1.67V와 3.1us로, 기존 구조가 갖는 2.25V와 3.4us비해 각각 약 25%의 감소된 순방향 전압강하와 약 9% 감소된 스위칭 특성을 보였다.

Keywords

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