Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of Transparent Conductive IGZO Thin Films Deposited at Various Substrate Temperatures

다양한 기판온도에서 증착된 투명 전도성 IGZO 박막의 특성

  • Kim, Mi-Sun (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Kim, Dong-Young (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Seo, Sung-Bo (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Bae, Kang (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Sohn, Sun-Young (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Kim, Hwa-Min (Department of Electronics Engineering, Catholic University of Daegu)
  • 김미선 (대구가톨릭대학교 전자공학과) ;
  • 김동영 (대구가톨릭대학교 전자공학과) ;
  • 서성보 (대구가톨릭대학교 전자공학과) ;
  • 배강 (대구가톨릭대학교 전자공학과) ;
  • 손선영 (대구가톨릭대학교 전자공학과) ;
  • 김화민 (대구가톨릭대학교 전자공학과)
  • Received : 2010.08.20
  • Accepted : 2010.12.01
  • Published : 2010.12.01
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Abstract

In this study, we investigated the optical, electrical, and structural properties of the IGZO($In_2O_3:Ga_2O_3:ZnO$=1:9:90 wt.%) thin films prepared by RF-magnetron sputtering system under various substrate temperatures. All of the IGZO thin films shows an average transmittance of over the 80% in visible range. Most of all, deposited IGZO thin film at $100^{\circ}C$ substrate temperature have ZnO (002) of main growth peak and 17.02 nm of increased grains. And also IGZO thin film have low resistivity($1.35{\times}10^{-3}\;\Omega{\cdot}cm$), high carrier concentration($6.62{\times}10^{20} cm^{-3}$) and mobility($80.1 cm^2$/Vsec). IGZO thin film have 2.08 mV at surface potential of electric force microscopy(EFM). We suggest that pre-annealing at $100^{\circ}C$ can be applied for improving optical, electrical and structural properties.

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References

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