참고문헌
- K. Nomura et al., "Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors," Nature, vol. 432, no. 7016, 2004, pp. 488-492. https://doi.org/10.1038/nature03090
- J. Wager, "Transparent Electronics," Science, vol. 300, no. 5623, 2003, pp. 1245-1246. https://doi.org/10.1126/science.1085276
- E.M.C. Fortunato et al., "Fully Transparent ZnO Thin Film Transistor Produced at Room Temperature," Adv. Mater., vol. 17, no. 5, 2005, pp. 590-594. https://doi.org/10.1002/adma.200400368
- H.N. Lee et al., "3.5 Inch QCIF+ AM-OLED Panel Based on Oxide TFT Backplane," Tech. Dig. SID07, California, USA, 2007, pp. 1826-1829.
- H. Ohta and H. Hosono, "Transparent Oxide Optoelectronics," Material Today, vol. 7, no. 6, 2004, pp. 42-51.
- I. Song et al., " Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory," IEEE Electron Device Letters, vol. 29, no. 6, 2008, pp. 549-552. https://doi.org/10.1109/LED.2008.920965
- S.-H. K. Park et al., "Transparent and Photo-Stable ZnO Thin-Film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel," Adv. Mater., vol. 21, no. 6, 2009, pp. 678-682. https://doi.org/10.1002/adma.200801470
- J. Lee et al., "World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT," Tech. Dig. SID08, California, USA, 2008, pp. 625-628.
- M. Ito et al., "Amorphous Oxide TFT and Their Applications in Electrophoretic Displays," Physica Status Solidi (a), vol. 205, no. 8, 2008, pp. 1885-1894. https://doi.org/10.1002/pssa.200778910
- R.B.M. Cross and M.M. De Souza, "Investigating the Stability of Zinc Oxide Thin Film Transistors," Appl. Phys. Lett., vol. 89, no. 26, 2006, pp. 263513-263515. https://doi.org/10.1063/1.2425020
- J.K. Jeong et al., "High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel," Appl. Phys. Lett., vol. 91, no. 11, 2007, pp. 113505-113507. https://doi.org/10.1063/1.2783961
- E.M.C. Fortunato et al., "High Mobility Indium Free Amorphous Oxide Thin Film Transistors," Appl. Phys. Lett., vol. 92, no. 22, 2008, pp. 222103-222105. https://doi.org/10.1063/1.2937473
- J.K. Jeong et al., "Impact of Device Configuration on the Temperature Instability of Al-Zn-Sn-O Thin Film Transistor," Appl. Phys. Lett., vol. 95, no. 12, 2009, pp. 123505-123507. https://doi.org/10.1063/1.3236694
- N.L. Dehuff et al., "Transparent Thin-Film Transistors with Zinc Indium Oxide Channel Layer," J. Appl. Phys., vol. 97, no. 6, 2005, pp. 64505-64508 https://doi.org/10.1063/1.1862767
- S.-H. K. Park et al., "Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition," Electrochemical and Solid-State Letters, vol. 11, no. 1, 2008, pp. H10-H14. https://doi.org/10.1149/1.2801017
- J.H. Shin et al., "Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors," ETRI Journal, vol. 31, no. 1, 2009, pp. 62-64. https://doi.org/10.4218/etrij.09.0208.0266
- C.J. Kim et al., "Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor," Electrochemical and Solid-State Letters, vol. 12, no. 4, 2009, pp. H95-H97. https://doi.org/10.1149/1.3067838
-
I. Yagi, K. Tsukagoshia, and Y. Aoyagi, "Modification of the Electric Conduction at the Pentacene/
$SiO_2$ Interface by Surface Termination of$SiO_2$ ," Appl. Phys. Lett., vol. 86, no. 10, 2005, pp. 103502-103504. https://doi.org/10.1063/1.1875749 - A.R. Hepburn et al., "Metastable Defects in Amorphous-Silicon Thin Film Transistors," Physical Review Letters, vol. 56, no. 20, 1986, pp. 2215-2217. https://doi.org/10.1103/PhysRevLett.56.2215
- S.-H. K. Park et al., "Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition," Electrochemical and Solid-State Letters, vol. 9, no. 10, 2006, pp. G299-G301. https://doi.org/10.1149/1.2221770
- J.W. Lim and S.J. Yun, "Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition," Electrochemical and Solid-State Letters, vol. 7, no. 8, 2004, pp. F45-F48. https://doi.org/10.1149/1.1756541
- D.-H. Cho et al., "Transparent Al–Zn–Sn–O Thin Film Transistors Prepared at Low Temperature," Appl. Phys. Lett., vol. 93, no. 14, 2008, pp. 142111-142113. https://doi.org/10.1063/1.2998612
-
S.J. Yun et al., "Dependence of Atomic Layer-Deposited
$Al_2O_3$ Films Characteristics on Growth Temperature and Al Precursors of$Al(CH_3)_3$ and$AlCl_3$ ," J. Vac. Sci. Technol. A, vol. 15, no. 6, 1997, pp. 2993-2997. https://doi.org/10.1116/1.580895 - C.G. Van de Walle, "Hydrogen as a Cause of Doping in Zinc Oxide," Phys. Rev. Lett., vol. 85, no. 5, 2000, pp. 1012-1015. https://doi.org/10.1103/PhysRevLett.85.1012
- R.L. Hoffman, "ZnO-Channel Thin Film Transistor: Channel Mobility," J. Appl. Phys., vol. 95, no. 10, 2004, pp. 5813-5819. https://doi.org/10.1063/1.1712015
- J.S. Park et al., "Electronic Transport Properties of Amorphous Indium-Gallium-Zinc Oxide Semiconductor upon Exposure to Water," Appl. Phys. Lett., vol. 92, no. 7, 2008, pp. 72104-72106. https://doi.org/10.1063/1.2838380
- J.K. Jeong et al., "Origin of Threshold Voltage Instability in Indium-Gallium-Zinc Oxide Thin Film Transistors," Appl. Phys. Lett., vol. 93, no. 12, 2008, pp. 123508-123510. https://doi.org/10.1063/1.2990657
-
H. Yin et al., "Bootstrapped Ring Oscillator with Propagation Delay Time below 1.0 nsec/stage by Standard 0.5
$\mu$ m Bottom-Gate Amorphous Ga2O3-In2O3-ZnO TFT Technology," Electron Device Meeting, IEEE International, 15-17, Dec. 2008, pp. 1-4.
피인용 문헌
- A Protective Layer on the Active Layer of Al-Zn-Sn-O Thin-Film Transistors for Transparent AMOLEDs vol.10, pp.4, 2009, https://doi.org/10.1080/15980316.2009.9652097
- Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics vol.28, pp.4, 2009, https://doi.org/10.1116/1.3455494
- Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors vol.49, pp.4, 2010, https://doi.org/10.1143/jjap.49.04dj06
- Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al[sub 2]O[sub 3] and ZnO for Transparent Thin Film Transistor Applications vol.157, pp.7, 2010, https://doi.org/10.1149/1.3421680
- Effect of Double-Layered Al[sub 2]O[sub 3] Gate Insulator on the Bias Stability of ZnO Thin Film Transistors vol.13, pp.8, 2009, https://doi.org/10.1149/1.3428745
- Oxide Thin Film Transistor Circuits for Transparent RFID Applications vol.93, pp.10, 2009, https://doi.org/10.1587/transele.e93.c.1504
- Device reliability under electrical stress and photo response of oxide TFTs vol.18, pp.10, 2009, https://doi.org/10.1889/jsid18.10.779
- Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance vol.32, pp.12, 2009, https://doi.org/10.1109/led.2011.2167122
- Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor vol.58, pp.7, 2011, https://doi.org/10.1109/ted.2011.2139212
- Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer vol.94, pp.5, 2009, https://doi.org/10.1587/transele.e94.c.786
- Light Response of Top Gate InGaZnO Thin Film Transistor vol.50, pp.3, 2011, https://doi.org/10.7567/jjap.50.03cb08
- Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell vol.102, pp.4, 2009, https://doi.org/10.1007/s00339-011-6280-9
- Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors vol.30, pp.4, 2009, https://doi.org/10.1116/1.4731257
- Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation vol.34, pp.2, 2009, https://doi.org/10.4218/etrij.12.0211.0186
- Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors vol.4, pp.10, 2009, https://doi.org/10.1021/am301253x
-
Trilayer ZnO Thin-Film Transistors With In Situ
${\rm Al}_{2}{\rm O}_{3}$ Passivation vol.34, pp.11, 2009, https://doi.org/10.1109/led.2013.2283337 - Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors vol.31, pp.2, 2009, https://doi.org/10.1116/1.4789423
- Bilayered Etch-Stop Layer of Al2O3/SiO2for High-Mobility In-Ga-Zn-O Thin-Film Transistors vol.52, pp.r10, 2009, https://doi.org/10.7567/jjap.52.100209
- Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma vol.14, pp.4, 2013, https://doi.org/10.4313/teem.2013.14.4.216
- Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer vol.35, pp.3, 2014, https://doi.org/10.1109/led.2014.2301800
- Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures vol.61, pp.1, 2009, https://doi.org/10.1109/ted.2013.2288264
- Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer vol.61, pp.7, 2009, https://doi.org/10.1109/ted.2014.2318751
- Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications vol.32, pp.4, 2009, https://doi.org/10.1116/1.4880823
- Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates vol.3, pp.18, 2009, https://doi.org/10.1039/c5tc00048c
- Effect of mid-annealing process on the device characteristics of the TFT using Al-doped ZnO active channels prepared by atomic layer deposition vol.54, pp.3, 2015, https://doi.org/10.7567/jjap.54.03cb01
- Indium–Gallium–Zinc–Oxide Thin-Film Transistors Based on Homojunctioned Structure Fabricated With a Self-Aligned Process vol.11, pp.7, 2009, https://doi.org/10.1109/jdt.2015.2418341
- Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors vol.111, pp.None, 2015, https://doi.org/10.1016/j.sse.2015.06.003
- Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning vol.62, pp.11, 2009, https://doi.org/10.1109/ted.2015.2479592
- Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications vol.55, pp.3, 2009, https://doi.org/10.7567/jjap.55.03cc03
- Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors vol.37, pp.1, 2009, https://doi.org/10.1109/led.2015.2504931
- Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors vol.8, pp.11, 2009, https://doi.org/10.1021/acsami.5b10847
- High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C vol.37, pp.8, 2016, https://doi.org/10.1109/led.2016.2582319
- Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors vol.27, pp.32, 2016, https://doi.org/10.1088/0957-4484/27/32/325203
- The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 vol.37, pp.9, 2016, https://doi.org/10.1109/led.2016.2594258
- 60‐3: Distinguished Paper: Oxide Vertical TFTs for the Application to the Ultra High Resolution Display vol.47, pp.1, 2009, https://doi.org/10.1002/sdtp.10799
- Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors vol.28, pp.2, 2009, https://doi.org/10.1088/1361-6528/28/2/025304
-
Influence of Fast Charging on Accuracy of Mobility in
${a}$ -InHfZnO Thin-Film Transistor vol.38, pp.2, 2009, https://doi.org/10.1109/led.2016.2638965 - Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I–V method vol.28, pp.17, 2017, https://doi.org/10.1088/1361-6528/aa651c
- Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition vol.9, pp.27, 2017, https://doi.org/10.1021/acsami.7b04637
- Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O2 Annealing vol.64, pp.10, 2009, https://doi.org/10.1109/ted.2017.2737552
- Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2 O3 /SiNx Gate Insulator vol.214, pp.12, 2009, https://doi.org/10.1002/pssa.201700183
- Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates vol.14, pp.6, 2009, https://doi.org/10.1007/s13391-018-0083-5
- Discharge Current Analysis Estimating the Defect Sites in Amorphous Hafnia Thin-Film Transistor vol.65, pp.8, 2009, https://doi.org/10.1109/ted.2018.2842193
- Effects of Repetitive Mechanical Stress on Flexible Oxide Thin-Film Transistors and Stress Reduction via Additional Organic Layer vol.39, pp.7, 2009, https://doi.org/10.1109/led.2018.2839267
- Effects of Hydroxyl Group in AlO x Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors vol.216, pp.6, 2009, https://doi.org/10.1002/pssa.201800737
- Analysis of Mechanical and Electrical Origins of Degradations in Device Durability of Flexible InGaZnO Thin-Film Transistors vol.2, pp.7, 2009, https://doi.org/10.1021/acsaelm.0c00339
- Mechanical Durability of Flexible/Stretchable a-IGZO TFTs on PI Island for Wearable Electronic Application vol.3, pp.11, 2009, https://doi.org/10.1021/acsaelm.1c00806
- Improving the electrical performance of vertical thin-film transistor by engineering its back-channel interface vol.253, pp.None, 2009, https://doi.org/10.1016/j.mee.2021.111676