Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Synthesis of Graphene on Ni/SiO2/Si Substrate by Inductively-Coupled Plasma-Enhanced Chemical Vapor Deposition

유도결합 플라즈마 화학기상증착법을 이용한 Ni/SiO2/Si 기판에서 그라핀 제조

  • Park, Young-Soo (Department of Materials Science & Engineering, Chungnam National University) ;
  • Huh, Hoon-Hoe (Department of Materials Science & Engineering, Chungnam National University) ;
  • Kim, Eui-Tae (Department of Materials Science & Engineering, Chungnam National University)
  • 박영수 (충남대학교 공과대학 재료공학과) ;
  • 허훈회 (충남대학교 공과대학 재료공학과) ;
  • 김의태 (충남대학교 공과대학 재료공학과)
  • Published : 2009.10.27
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Abstract

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

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