Energy-band-gap Variation of InxGaN1-x Thin Films with Indium Composition

인듐량에 따른 InxGaN1-x 박막의 에너지밴드갭 변화

  • 박기철 (경상대학교 전기전자공학부 및 공학연구원) ;
  • 마대영 (경상대학교 전기전자공학부 및 공학연구원)
  • Published : 2009.08.01


$In_xGa_{1-x}N$ alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at $800\;^{\circ}C$. TMGa, TMIn and $NH_3$ were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in $In_xGa_{1-x}N$ films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of $In_xGa_{1-x}N$ films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for $In_xGa_{1-x}N$ alloys were well fit with a bowing parameter of 2.27.


  1. C. Miao, H. Lu, X. Z. Du, Y. Li, R. Zhang, and Y. D. Zheng, 'InGaN/GaN multi- quantum-well planar metal-semiconductor- metal light-emitting diodes', Electron. Lett., Vol. 44, p. 441, 2008
  2. S.-C. Hsu, C.-Y. Lee, J.-M. Hwang, J.-Y. Su, D.-S. Wuu, and Horng, R.-H., 'Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching', IEEE Photonics Technology Lett., Vol. 18, p. 2472, 2006
  3. N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, 'Blue-emitting InGaN-GaN double -heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2', Appl. Phys. Lett., Vol. 91, p. 243506, 2007
  4. M.-K. Kwon, I.-K. Park, J.-Y. Kim, J.-O. Kim, B. J. Kim, and S.-J. Park, 'Gradient doping of Mg in p-Type GaN for high efficiency InGaN-GaN ultraviolet light- emitting diode', IEEE Photonics Technology Lett., Vol. 19, p. 1880, 2007
  5. S. Korçak, M. Kemal Ozturk, S. Çorekçi, B. Akaoglu, H. Yu, M. Çakmak, S. Sagam, S. Ozçelik, and E. Ozbay, 'Structural and optical properties of an InxGa1-xN/GaN nanostructure', Surface Science, Vol. 601, p. 3892, 2007
  6. J.-K. Sheu, Y. S. Lu, M.-L. Lee, and W. C. Lai, 'Enhanced efficiency of GaN based LEDs with periodic textured Ga-doped ZnO transparent contact layer', Appl. Phys. Lett., Vol. 90, p. 263511, 2007
  7. K. S. Kim, J. K. Son, S. N. Lee, Y. J. Sung, H. S. Paek, H. K. Kim, M. Y. Kim, K. H. Ha, H. Y. Ryu, O. H. Nam, T. Jang, and Y. J. Park, 'Characteristics of long wavelength InGaN quantum well laser diodes', Appl. Phys. Lett., Vol. 92, p. 101103, 2008
  8. S.-N. Lee, J. K. Son, H. S. Paek, Y. J. Sung, K. S. Kim, H. K. Kim, H. Kim, T. Sakong, Y. Park, K. H. Ha, and O. H. Nam, 'High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers', Appl. Phys. Lett., Vol. 93, p. 091109, 2008
  9. F. B. Naranjo, M. A. Sánchez-García, F. Calle, E. Calleja, B. Jenichen, and K. H. Ploog, 'Strong localization in InGaN layers with high In content grown by molecular- beam epitaxy', Appl. Phys. Lett., Vol. 80, p. 231, 2002
  10. M. D. McCluskey, C. G. Van de Walle, C. P. Master, L. T. Romano, and N. M. Johnson, 'Large band gap bowing of InxGa1–xN alloys', Appl. Phys. Lett., Vol. 72, p. 2725, 1998
  11. C. A. Parker, J. C. Roberts, S. M. Bedair, M. J. Reed, S. X. Liu, N. A. El-Masry, and L. H. Robins, 'Optical band gap dependence on composition and thickness of InxGa1–xN (0
  12. C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki, 'Optical band gap in Ga1–xInxN (0
  13. A. F. Wright and J. S. Nelson, 'Bowing parameters for zinc-blende Al1–xGaxN and Ga1–xInxN', Appl. Phys. Lett., Vol. 66, p. 3051, 1995
  14. W. Walukiewicz, S. X. Li, J. Wu, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, and William J. Schaff, 'Optical properties and electronic structure of InN and In-rich group III-nitride alloys', Journal of Crystal Growth, Vol. 269, p. 119, 2004
  15. S. Fu, J. Chen, H. Zhang, C. Guo, W. Li, and W. Zhao, 'Characterizations of GaN film growth by ECR plasma chemical vapor deposition', Journal of Crystal Growth, Vol. 311, p. 3325, 2009
  16. X. Y. Meng, Y. H. Zhang, and W. Z. Shen, 'Exciton localization effect in Mn-implanted GaN by photoluminescence measurements', Physica B: Condensed Matter, Vol. 404, p. 1222, 2009
  17. 한봉희, 'X선 회절', 반도출판사, p. 469, 1990
  18. J. Wu, E. E. Haller, H. Lu, and William J. Schaff, 'Small band gap bowing in Ga1–xInxN alloys', Appl. Phys. Lett., Vol. 80, p. 4741, 2002
  19. M. Ferhat, J. Furthmuller, and F. Bechstedt, 'Gap bowing and Stokes shift in InxGa1–xN alloys: First-principle studies', Appl. Phys. Lett., Vol. 80, p. 1394, 2002
  20. J. Wu and W. Walukiewicz, 'Band gaps of InN and group III nitride alloys', Superlattices and Microstructurees, Vol. 34, p. 63, 2003