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Development of Bonded Wafer Analysis System

본딩 웨이퍼 분석 시스템 개발

  • 장동영 (서울산업대학교 산업정보시스템공학과) ;
  • 반창우 (서울산업대학교 에너지환경대학원 NIT공학과) ;
  • 임영환 (서울테크노파크) ;
  • 홍석기 (서울산업대학교 IT정책전문대학원 산업정보시스템공학과)
  • Published : 2009.09.01

Abstract

In this paper, bonded wafer analysis system is proposed using laser beam transmission; while the transmission model is derived by simulation. Since the failure of bonded wafer stems in void existence, transmittance deviations caused by the thickness of the void are analyzed and variations of the intensity through the void or defect easily have been recognized then the testing power has been increased. In addition, large screen display on laser study has been done which resulted in acquiring a feasible technique for analysis of the whole bonding surface. In this regard, three approaches are demonstrated in which Halogen lamp, IR lamp and laser have been tested and subsequently by results comparison the optimized technique using laser has been derived.

Keywords

References

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