Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Implementation of a High Power Backward Wave Oscillator on Electron Beam Diode Structure Improvement

전자빔 다이오드 구조개선에 의한 대전력 후진파발진기의 구현

  • 김원섭 (전남도립대학 컴퓨터응용전기과)
  • Received : 2009.07.17
  • Accepted : 2009.09.04
  • Published : 2009.10.01
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Abstract

We have designed the backward wave oscillator. A power-pulsed generator oscillated at 24 GHz has higher frequency than current one. It is very inportant to prevent microwave from going into the beam diode, since intence microwave will harmfully affect beam generation. Due to the axial mode operation, there exist a critial value of beam energy for the oscillation. By changing the condition at the SWS end, an enhanced performance of the K-band oversized BWO is observed in a low magnetic field region about 0.8T.

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References

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