Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical and Optical properties of TiO2-doped ZnO Films prepared on PEN by RF-magnetron Sputtering Method

고주파 마그네트론 스퍼터링에 의해 성막된 TiO2가 도핑된 ZnO 박막의 전기적 및 광학적 특성

  • 김화민 (대구가톨릭대학교 전자공학과) ;
  • 손선영 (대구가톨릭대학교 전자공학과)
  • Received : 2009.08.03
  • Accepted : 2009.09.11
  • Published : 2009.10.01
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Abstract

$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

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References

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