Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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High Breakdown-Voltage AlGaN/GaN High Electron Mobility Transistor having a Trapezoidal Gate Structure

사다리꼴 게이트 구조를 갖는 고내압 AlGaN/GaN HEMT

  • Kim, Jae-Moo (School of Electrical Engineering., Korea University) ;
  • Kim, Su-Jin (School of Electrical Engineering., Korea University) ;
  • Kim, Dong-Ho (School of Electrical Engineering., Korea University) ;
  • Jung, Kang-MIn (School of Electrical Engineering., Korea University) ;
  • Choi, Hong-Goo (Electronic Materials & Devices Packing Research Center., Korea Electronics Technology Institute) ;
  • Hahn, Cheol-Koo (Electronic Materials & Devices Packing Research Center., Korea Electronics Technology Institute) ;
  • Kim, Tae-Geun (School of Electrical Engineering., Korea University)
  • 김재무 (고려대학교 전자전기공학과) ;
  • 김수진 (고려대학교 전자전기공학과) ;
  • 김동호 (고려대학교 전자전기공학과) ;
  • 정강민 (고려대학교 전자전기공학과) ;
  • 최홍구 (한국전자부품연구원 전자소재패키징연구센터) ;
  • 한철구 (한국전자부품연구원 전자소재패키징연구센터) ;
  • 김태근 (고려대학교 전자전기공학과)
  • Published : 2009.04.25
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Abstract

We propose a trapezoidal gate AlGaN/GaN high electron mobility transistor(HEMT) to improve the breakdown voltage characteristics and its feasibility is investigated by two-dimensional device simulations. The use of a trapezoidal gate structure appears to be quite effective in dispersing the electric fields concentrated near the gate edge on the drain side from the simulation result. We find that a peak value of the electric field along the 2-DEG channel is reduced by 30%, from 4.8 to 3.5 MV/cm and thereby, the breakdown voltage(Vbr) of the proposed AlGaN/GaN HEMT is increased by about 40%, from 49 to 69 V, compared to those of the standard AlGaN/GaN HEMT.

본 논문에서는 항복 전압 특성을 향상시키기 위한 사다리꼴 게이트 구조의 AlGaN/GaN HEMT구조를 제안하였으며 그 실현 가능성을 2차원 소자 시뮬레이터를 통해 조사하였다. 사다리꼴 게이트 구조의 사용으로 드레인 방향의 게이트 모서리 부근에서 나타나는 전계의 집중을 효과적으로 분산되는 것이 시뮬레이션 결과에서 확인 되었다. 제안된 사다리꼴 게이트 AlGaN/GaN HEMT 소자 구조에서 2DEG 채널을 따라 형성되는 전계의 피크값은 4.8 MV/cm 에서 3.5 MV/cm 로 기존 구조의 AlGaN/GaN HEMT에 비해 30% 가량 감소하였으며, 그 결과로 인해 항복 전압은 49 V 에서 69 V 로 40 % 가량 증가하였다.

Keywords

References

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